Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities

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概要

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• Using the epitaxial lateral growth technique, we compared the crystallinity and relaxation ratio of 3-μm- and 200-nm-thick Al<inf>0.5</inf>Ga<inf>0.5</inf>N on an AlN template and AlN grown by epitaxial lateral overgrowth (ELO-AlN), both of which were grown on a sapphire substrate. Although the relaxation ratios of 3-μm-thick Al<inf>0.5</inf>Ga<inf>0.5</inf>N were almost the same, the misfit dislocation density at the interface and the density of threading dislocations reaching the surface of Al<inf>0.5</inf>Ga<inf>0.5</inf>N were significantly different. Also, the increase in the density of newly generated misfit dislocations was found to be highly dependent on the quality of the AlN underlying layer. We also discuss the difference in the initial growth mode of each Al<inf>0.5</inf>Ga<inf>0.5</inf>N sample.

• 2013-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• Matsubara Yuko

  Faculty Of Horticulture Chiba University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Ide Kimiyasu

  Faculty Of Science And Technology Meijo University

• Amano Hiroshi

  Graduate School of Engineering and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

• Matsubara Yuko

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Ide Kimiyasu

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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