Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures

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概要

• 論文の詳細を見る

• We investigated hole concentrations induced by spontaneous and piezoelectric polarization charges in GaN/AlGaN/GaN heterostructures. An AlN mole fraction dependence reveals that the induced hole concentrations were accurately controlled by the AlN mole fractions up to 0.34 in the GaN/AlGaN/GaN structures. We then demonstrated vertical hole conduction across an undoped graded AlGaN layer and hole injection to an active region in a LED structure to some extent. These results suggest that the controlled polarization charges by AlN mole fractions have potential as an alternative doping method for high hole concentrations in nitride semiconductors.

• 2013-08-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TAKEUCHI Tetsuya

  Faculty of Science and Technology, Meijo University

• Watanabe Masahiro

  Faculty Of Environmental Earth Science Hokkaiod University:center For Climate System Research The University Of Tokyo

• Yasuda Toshiki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Yagi Kouta

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Nakashima Tsubasa

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

• Suzuki Tomoyuki

  Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

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