High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

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概要

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• An excellent on/off ratio of drain–source current ($I_{\text{DS}}$) density over 6 orders of magnitude by changing the gate voltage ($V_{\text{G}}$) from 3 to 0 V was confirmed in p-GaN/u-AlxGa1-xN/u-GaN junction heterostructure field-effect transistors. These devices show an extremely low leakage $I_{\text{DS}}$ density of as low as 15.5 nA/mm at $V_{\text{DS}}$ and $V_{\text{G}}$ of 10 and 0 V. On resistance is as low as 2.65 m$\Omega$$\cdot$cm2 at $V_{\text{G}} = 3.0$ V.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-10-25

著者

• Kamiyama Satoshi

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Faculty Of Science And Technology Meijo University

• Fujii Takahiro

  Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University

• Iwaya Motoaki

  Faculty Of Science And Technology Meijo University

• TSUYUKUCHI Norio

  Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University

• Amano Hiroshi

  Faculty Of Horticulture Chiba University

• Kamiyama Satoshi

  Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

• Tsuyukuchi Norio

  Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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