Tsuyukuchi Norio | Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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概要
- Tsuyukuchi Norioの詳細を見る
- 同名の論文著者
- Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japanの論文著者
関連著者
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Amano H
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Kamiyama Satoshi
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty Of Science And Technology Meijo University
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TSUYUKUCHI Norio
Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University
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Amano Hiroshi
Faculty Of Horticulture Chiba University
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Tsuyukuchi Norio
Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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天野 洋
千葉大
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AMANO Hiroshi
Faculty of Horticulture, Chiba University
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IWAYA Motoaki
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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KAMIYAMA Satoshi
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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AKASAKI Isamu
Faculty of Science and Technology, 21st-Century COE Program "Nano-factory", Meijo University
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Kamiyama S
Faculty Of Science And Technology Meijo University
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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Akasaki I
Faculty Of Science And Technology Meijo University
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Akasaki I
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Noro Tadashi
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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Fujii Takahiro
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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Amano H
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Iwaya M
Faculty Of Science And Technology Meijo University
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天野 洋
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Hirose Yoshikazu
Faculty Of Science And Technology 21st Coe Program "nano-factory" Meijo University
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天野 洋
千葉大・園芸・応動昆
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HIROSE Yoshikazu
Faculty of Science and Technology, 21st COE Program "Nano-factory", Meijo University
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天野 洋
千葉大学大学院・園芸学研究科・応用動物昆虫学研究室
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University
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Akasaki Isamu
Faculty of Science and Technology, Meijo University
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Nagamatsu Kentaro
Faculty of Science and Technology, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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NAGAMATSU Kentaro
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University
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Nagata Kensuke
Meijo Univ. Nagoya Jpn
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Kamiyama Satoshi
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Kamiyama Satoshi
Faculty of Science and Technology, 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Nagamatsu Kentaro
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Tsuyukuchi Norio
Faculty of Science and Technology, the 21st Century COE Program "Nano-Factory", Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
著作論文
- Control of Threshold Voltage of Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact