Iwaya Motoaki | Faculty of Science and Technology, Meijo University
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概要
関連著者
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Iwaya M
Faculty Of Science And Technology Meijo University
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki I
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Faculty of Science and Technology, Meijo University
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Kamiyama S
Silicon Systems Research Laboratories Nec Corporation
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Kamiyama Satoshi
Ulsi Device Development Laboratories Nec Corporation
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IWAYA Motoaki
Department of Electrical and Electronic Engineering, Meijo University
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Kamiyama Satoshi
Faculty of Science and Technology, Meijo University
著作論文
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Microscopic Investigation of Al_Ga_N on Sapphire
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- High On/Off Ratio in Enhancement-Mode Al_xGa_N/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
- Fracture of Al_χGa_N/GaN Heterostructure ; Compositional and Impurity Dependence : Semiconductors
- Theoretical Analysis of Optical Transverse-Mode Control on GaN-Based Laser Diodes(Special Issue on Blue Laser Diodes and Related Devices/Technologies)