AMANO Hiroshi | Meijo University, Department of Electrical and Electronic Engineering
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概要
関連著者
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Akasaki Isamu
Meijo University Department Of Electrical And Electronic Engineering
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AMANO Hiroshi
Meijo University, Department of Electrical and Electronic Engineering
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Akasaki Isamu
Meijo University
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Amano Hiroshi
Meijo University Department Of Electrical And Electronic Engineering
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Katsuragawa Maki
Meijo University
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Komori M
Meijo Univ. Nagoya Jpn
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Suzuki H
Communications Res. Lab. Kobe Jpn
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Koide Takashi
Meijo University Department Of Electrical And Electronic Engineering
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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KOIKE Masayoshi
Toyoda Gosei Co., Ltd.
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Kashima Takayuki
Department Of Materials Science And Engineering And Nano-factory Meijo University
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Sakai H
Department Of Electrical And Electronic Engineering Meijo University
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KARIYA Michihiko
Department of Electrical and Electronic Engineering, Meijo University
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Suzuki H
Univ. Tokyo Tokyo Jpn
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Iwaya M
Faculty Of Science And Technology Meijo University
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SAKAI Hiromitsu
Meijo University, Department of Electrical and Electronic Engineering
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SUZUKI Hiroyuki
Meijo University, Department of Electrical and Electronic Engineering
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YAMAGUCHI Machiko
Meijo University, Department of Electrical and Electronic Engineering
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YAMASAKI Shiro
Toyoda Gosei Co., Ltd.
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Schneider J
Kraton Polymers
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Koike M
Toshiba Corp. Yokohama Jpn
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IWAYA Motoaki
Meijo University
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KASHIMA Takayuki
Meijo University
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HAN Jung
Sandia National Laboratories
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HEARNE Sean
Sandia National Laboratories
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FLORO Jerry
Sandia National Laboratories
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CHASON Eric
Sandia National Laboratories
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FIGIEL Jeffrey
Sandia National Laboratories
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Yamasaki Shiro
Toyoda Gosei Co. Ltd.
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MAIER Karin
Fraunhofer-Institut fur Angewandte Festkorperphysik
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SCHNEIDER Jurgen
Fraunhofer-Institut fur Angewandte Festkorperphysik
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Yamaguchi Machiko
Meijo University Department Of Electrical And Electronic Engineering
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Iwaya Motoaki
Faculty of Science and Technology, Meijo University
著作論文
- Stress and Defect Control in GaN Using Low Temperature Interlayers
- GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
- Radiative Energy Transfer in GaN:Mg/Al_2O_3:Cr^ Epitaxial Systems