GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-11-01
著者
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Suzuki H
Communications Res. Lab. Kobe Jpn
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Koide Takashi
Meijo University Department Of Electrical And Electronic Engineering
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Akasaki Isamu
Meijo University Department Of Electrical And Electronic Engineering
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KOIKE Masayoshi
Toyoda Gosei Co., Ltd.
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Sakai H
Department Of Electrical And Electronic Engineering Meijo University
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Katsuragawa Maki
Meijo University
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Suzuki H
Univ. Tokyo Tokyo Jpn
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Komori M
Meijo Univ. Nagoya Jpn
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SAKAI Hiromitsu
Meijo University, Department of Electrical and Electronic Engineering
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SUZUKI Hiroyuki
Meijo University, Department of Electrical and Electronic Engineering
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YAMAGUCHI Machiko
Meijo University, Department of Electrical and Electronic Engineering
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YAMASAKI Shiro
Toyoda Gosei Co., Ltd.
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AMANO Hiroshi
Meijo University, Department of Electrical and Electronic Engineering
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Koike M
Toshiba Corp. Yokohama Jpn
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Yamasaki Shiro
Toyoda Gosei Co. Ltd.
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Yamaguchi Machiko
Meijo University Department Of Electrical And Electronic Engineering
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Akasaki Isamu
Meijo University
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Amano Hiroshi
Meijo University Department Of Electrical And Electronic Engineering
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