Effect on GaN/Al_<0.17>Ga_<0.83>N and Al_<0.05>Ga_<0.95>N/Al_<0.17>Ga_<0.83>N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-02-15
著者
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山口 滋
Department Of Physics School Of Science Tokai University
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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Yamaguchi S
Hitachi Ltd. Tokyo Jpn
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Akasaki I
Faculty Of Science And Technology Meijo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
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Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
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Yamaguchi Shinji
Department Of Electrical Engineering Suzuka Technical College
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Yamaguchi Shigeo
High-tech Research Center Meiji University
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Yamaguchi Shigeo
Department Of Physics Tokyo Metropolitan University
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Yamaguchi Shigeo
Department Of Electronic Science And Engineering Kyoto University
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KARIYA Michihiko
Department of Electrical and Electronic Engineering, Meijo University
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NITTA Shugo
Department of Electrical and Electronic Engineering, Meijo University
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KOSAKI Masayoshi
Department of Electrical and Electronic Engineering, Meijo University
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YUKAWA Yohei
Department of Electrical and Electronic Engineering, Meijo University
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Nitta Shugo
Department Of Electrical And Electronic Engineering Meiji University
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Kariya Michihiko
Department Of Electrical And Electronic Engineering Meijo University
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Yukawa Yohei
Department Of Electrical And Electronic Engineering Meiji University
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Katsuragawa Maki
Meijo University
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Komori M
Meijo Univ. Nagoya Jpn
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Kariya Michihiko
Department Of Electrical And Electronic Engineering Meiji University
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Kosaki Masayoshi
Department Of Electrical And Electronic Engineering Meiji University
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Akasaki Isamu
Faculty of Science and Technology, Meijo University
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