The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-04-30

著者

• 山口 滋

  Department Of Physics School Of Science Tokai University

• AMANO Hiroshi

  High-Tech Research Center, Meijo University

• AKASAKI Isamu

  High-Tech Research Center, Meijo University

• Yamaguchi S

  Hitachi Ltd. Tokyo Jpn

• Akasaki I

  Faculty Of Science And Technology Meijo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering Meijyo University

• Akasaki Isamu

  Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University

• Yamaguchi Shinji

  Department Of Electrical Engineering Suzuka Technical College

• Yamaguchi Shigeo

  High-tech Research Center Meiji University

• Yamaguchi Shigeo

  Department Of Physics Tokyo Metropolitan University

• Yamaguchi Shigeo

  Department Of Electronic Science And Engineering Kyoto University

• KARIYA Michihiko

  Department of Electrical and Electronic Engineering, Meijo University

• NITTA Shugo

  Department of Electrical and Electronic Engineering, Meijo University

• Nitta Shugo

  Department Of Electrical And Electronic Engineering Meiji University

• Kariya Michihiko

  Department Of Electrical And Electronic Engineering Meijo University

• Katsuragawa Maki

  Meijo University

• Komori M

  Meijo Univ. Nagoya Jpn

• Kariya Michihiko

  Department Of Electrical And Electronic Engineering Meiji University

• Akasaki Isamu

  Faculty of Science and Technology, Meijo University

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