Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors

概要

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Using periodically grooved substrates, we propose a new approach to the growth of low-dislocation-density GaN single crystal. Three different substrates of basal-plane sapphire, 6H-SiC(0001)_<Si> and Si(111) were used. Each substrate's surface geometry was formed as periodical straight trenches oriented in either the ( 11^^-00)_<GaN> or (112^^-0)_<GaN> direction. No selective-growth mask of dielectric or metallic materials was deposited on any part of the substrates during the growth. The laterally grown area had etch pit densities of 4 × 10^6 cm^<-2> or less.
社団法人応用物理学会の論文
2001-01-15