Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-10-15
著者
-
Watanabe Akio
Ntional Institute Of Advanced Industrial Science And Technology
-
Ota Hiroyuki
Corporate Research And Development Laboratories Pioneer Corporation
-
Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
-
Takahashi H
Corporate Research And Development Laboratories Pioneer Corporation
-
TAKAHASHI Hirokazu
Corporate Research and Development Laboratories, Pioneer Corporation
-
WATANABE Atsushi
Corporate Research and Development Laboratories, Pioneer Corporation
-
CHIKUMA Kiyofumi
Corporate Research and Development Laboratories, Pioneer Corporation
-
TANAKA Toshiyuki
Corporate Research and Development Laboratories, Pioneer Corporation
-
AMANO Hiroshi
High-Tech Research Center, Meijo University
-
KASHIMA Takayuki
High-Tech Research Center, Meijo University
-
NAKAMURA Ryo
High-Tech Research Center, Meijo University
-
AKASAKI Isamu
High-Tech Research Center, Meijo University
-
Akasaki Isamu
Department Of Electrical And Electronic Engineering Meijyo University
-
Akasaki Isamu
Department Of Electrical And Electronic Engineering And High-tech Research Center Meijo University
-
Nakamura Ryo
Department Of Electrical & Electronic Engineering Meljo University
-
Tanaka T
Corporate Research And Development Laboratories Pioneer Corporation
-
Kashima Takayuki
Department Of Materials Science And Engineering And Nano-factory Meijo University
-
Takahashi Hirokazu
Corporate Research And Development Laboratories Pioneer Corporation
-
Takahashi Hisakazu
New Material Research Center Sanyo Electric Co. Ltd.
-
Takahashi Hisanori
Technical Department Tokyo Institute Of Technology
-
Watanabe Akiko
The Institute For Solid State Physics The University Of Tokyo
-
Watanabe A
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
-
Tanaka T
Ceramic Operation Ibiden Co. Ltd.
-
Watanabe Akiyoshi
College Of General Education Tohoku University
-
Chikuma K
Pioneer Corp. Saitama Jpn
-
Chikuma Kiyofumi
Corporate R&d Laboratories Pioneer Corporation
-
Tanaka Tooru
Faculty of Science and Technology, Meijo University
-
Akasaki Isamu
Faculty of Science and Technology, Meijo University
-
Takahashi Hirokazu
Corporate R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan
関連論文
- Preparation of PbTiO_3 Thin Films Using a Coating Photolysis Process with ArF Excimer Laser
- Direct Conversion of Metal Acetylacetonates and Metal Organic Acid Salts into Metal Oxides Thin Films Using Coating Photolysis Process with An ArF Excimer Laser
- Direct Conversion of Titanium Alkoxide into Crystallized TiO_2 (rutile) Using Coating Photolysis Process with ArF Excimer Laser
- Optical Gain and Optical Internal Loss of GaN-Based Laser Diodes Measured by Variable Stripe Length Method with Laser Processing : Optics and Quantum Electronics
- Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
- GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection
- Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy
- Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Characterization of a Non-Superconducting Cuprate, Bi_2Sr_2YCu_2O_ : Electrical Properties of Condensed Matter
- Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Structures and Upper Critical Fields of High T_c Superconductors (RE)Ba_2Cu_3O_x
- Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
- Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN
- Optical Absorption in Polarized Ga_In_xN/GaN Quantum Wells(Semiconductors)
- Microwave Dielectric Properties of CaO-Li_2O-Ln_2O_3-TiO_2 Ceramics
- Dielectric Characteristics of (A^_・A^_)TiO_3 Ceramics at Microwave Frequencies : Dielectric Properties
- Microscopic Investigation of Al_Ga_N on Sapphire
- Structure of Self-Assembled Monolayers from Amphiphilic Diacetylene Derivatives on Indium-Tin Oxide
- Alignment of Surface-Stabilized Ferroelectric Liquid Crystal by the Self-Assembled Monolayers of Amphiphilic Diacetylene Derivatives
- New RAM-bus Memory System with Interchip Optical Interconnection
- Micron-Size Optical Waveguide for Optoelectronic Integrated Circuit
- Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
- Direct Patterning of the Currernt Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment
- A Low-Wear Driving Method of Ultrasonic Motors
- A method for measuring liquid level using the flexural vibrations in a rod
- Optical Transitions of the Mg Acceptor in GaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- Crystal Sructure of Zirconium Oxide Deposited as Thin Films from Zr-acetylacetonate and Zr-ter-butoxide by Laser Chemical Vapor Deposition Technique
- Crystal Structures of the TiO_2 Films on the Quartz Substrate and the Powder formed in the Gaseous Phase by ArF Laser Photolysis of Ti(O-i-C_3H_7)_4
- Study on the Seeded Growth of AlN Bulk Crystals by Sublimation
- Negative Tone Dry Development of Si-Containing Resists by Laser Ablation
- Prevention of Resist Pattern Collapse by Flood Exposure during Rinse Process
- Simulation of AZ-PN100 Resist Pattern Fluctuation in X-Ray Lithography, Including Synchrotron Beam Polarization
- Freeze-Drying Process to Avoid Resist Pattern Collapse
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al_Ga_N/GaN Double Heterostructure
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
- Effect on GaN/Al_Ga_N and Al_Ga_N/Al_Ga_N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
- The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy
- Mosaic Structure of Ternary Al_In_xN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
- Large Grain Growth in Cu(In, Ga)Se_2 Thin Films with Band Gap of around 1.4 eV by Thermal Crystallization in Saturated Se Vapors
- Preparation of Ordered Vacancy Chalcopyrite Thin Films by RF Sputtering from CuInSe_2 Target with Na_2Se
- Highly Accurate CO_2 Gas Sensor Using a Modulation-Type Pyroelectric Infrared Detector
- Modulation Type Pyroelectric IR Detector
- Relationship between Crosstalk and Readout Magnetic Field Direction on Trilayer Magnetically-Induced Super Resolution Media
- Electrical Conductivity of Low-Temperature-Deposited Al_Ga_N Interlayer
- Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
- Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
- Structural Properties of Al_In_xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
- GaN Based Laser Diode with Focused Ion Beam Etched Mirrors
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
- Spatially Selective Formation of Microcrystalline Germanium by Laser-Induced Pyrolysis of Organogermanium Nanocluster Film
- Nanocrystalline Silicon Flim Prepared by Laser Annealing of Organosilicon Nanocluster : Semiconductors
- Electrical Properties of tert-Butyl-Substituted Germanium Cluster
- Effect of Hydrogen Plasma Treatment on Formation of Amorphous Silicon Film Using Organosoluble Silicon Cluster as a Precursor
- Homogeneous GaInSb Bulk Alloy Pulling by Solute-Feeding Czochralski Method
- Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer : Semiconductors
- Performance of GaN-Based Semiconductor Laser with Spectral Broadening due to Compositional Inhomogeneity in GaInN Active Layer
- Very High-Density Recording on Exchange-Coupled Trilayer Magnetically Induced Super Resolution Media without Special Initializing Magnet
- Optical Properties of Poly(pentafluorophenylsilyne) Prepared by Electrochemical Polymerization
- Imagings of Picosecond-Photoexcited Carriers and Enhanced Auger Recombination Rate by Transient Reflecting Grating Measurements
- Laser-Stimulated Scattering Microscope Study of an Jon-Implanted Silicon Surface
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films
- DEPURINATION OF ADENOSINE AND DEOXYADENOSINE MONOPHOSPHATES IN THE HEMIN-HYDROPEROXIDE SYSTEM
- Pulling Technique of a Homogeneous GaInSb Alloy under Solute-Feeding Conditions
- Investigation of the Characteristics of a Piezoelectric Chopper for a Modulation-Type Pyroelectric Infrared Detector
- Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates: A New Approach for Growing Low-Dislocation-Density GaN Single Crystals : Semiconductors
- Far-Infrared Optical Properties of Quenched Germanium : IV. Uniaxial Stress Effects on the SA_2 Acceptor
- Far-Infrared Optical Properties of Quenched Germanium III. : Effects of Additional Impurities
- Microwave Dielectric Properties and Crystal Structure of CaO-Li_2O-(1-x)Sm_2O_Ln_2O_3-TiO_2 (Ln: lanthanide) Ceramics System
- Ba-Mg-W-Ti-O Ceramics with Temperature-Stable Low Microwave Loss
- Microwave Dielectric Properties of Ba(Mg_W_)O_3-BaTiO_3 Ceramics
- Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction : Resist Material and Process
- Second-Harmonic Generation of Blue Light in Epitaxial K_3Li_Nb_O_ Waveguides on K_3Li_(Nb_Ta_)_O_ Substrates by Metalorganic Chemical Vapor Deposition
- Preparation of c-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
- Orientation Control of AlN Film by Electron Cyclotron Resonance Ion Beam Sputtering
- InGaAsP/InP Laterally Coupled Distributed Feedback Ridge Laser
- A New-Structure IR Gas Sensor
- Modulation Type Pyroelectric Infrared Sensor Using LiTaO_3 Single Crystal : P: Pyroelectrics
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
- Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
- The Dipole Moment of the B'O^+ State of IBr Determined through the Line Shape Analysis of the Stark Modulation Spectrum
- A New Method of Observing Doppler-Free UV and Visible Spectra
- On the Observation of Doppler-Free Resonance Fluorescence
- Fluctuation Spectroscopy: The Determination of Chemical Reaction Rates Based on the Optical Density Fluctuation
- A High Resolution Absorption Spectrum of HCHO Vapor by a New Designed Fabry-Perot Interferometer Spectroscope
- A Synchronous Wavelength Sweeping Method of a Diffraction Grating Fabry-Perot Interferometer in U.V. and Visible Regions
- Thermogravimetric and High-Temperature X-Ray Studies on the Orthorhombic-to-Tetragonal Transition of YBa_2Cu_3O_y
- Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
- Effects of Absorption of Nonlinear Optical Crystal on Conversion Efficiency of Cerenkov-Radiation Type Second-Harmonic Generation in Crystal-Cored Fiber
- High T_c Superconductor YBa_2Cu_3O_y : Oxygen Content vs T_c Relation
- Fabrication of Periodic Domain-Inversion in X-cut LiTaO_3 by Heat Treatment Technique in an Electric Field
- Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate