Effect of Intentionally Formed 'V-Defects' on the Emission Efficiency of GaInN Single Quantum Well
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-06-15
著者
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Watanabe Akio
Ntional Institute Of Advanced Industrial Science And Technology
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Ito A
Nihon Univ. Chiba Jpn
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Ota Hiroyuki
Corporate Research And Development Laboratories Pioneer Corporation
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Tanaka T
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Itoh Akihiro
Department Of Physical Science Graduate School Of Engineering Science Osaka University:core Research
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Takahashi H
Corporate Research And Development Laboratories Pioneer Corporation
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ITO Atsuya
Corporate Research and Development Laboratories, Pioneer Corporation
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TAKAHASHI Hirokazu
Corporate Research and Development Laboratories, Pioneer Corporation
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WATANABE Atsushi
Corporate Research and Development Laboratories, Pioneer Corporation
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CHIKUMA Kiyofumi
Corporate Research and Development Laboratories, Pioneer Corporation
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TANAKA Toshiyuki
Corporate Research and Development Laboratories, Pioneer Corporation
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Tanaka T
Corporate Research And Development Laboratories Pioneer Corporation
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Takahashi Hirokazu
Corporate Research And Development Laboratories Pioneer Corporation
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Takahashi Hisakazu
New Material Research Center Sanyo Electric Co. Ltd.
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Takahashi Hisanori
Technical Department Tokyo Institute Of Technology
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Watanabe Akiko
The Institute For Solid State Physics The University Of Tokyo
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Watanabe A
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Tanaka T
Ceramic Operation Ibiden Co. Ltd.
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Watanabe Akiyoshi
College Of General Education Tohoku University
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Chikuma K
Pioneer Corp. Saitama Jpn
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Chikuma Kiyofumi
Corporate R&d Laboratories Pioneer Corporation
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Tanaka Tooru
Faculty of Science and Technology, Meijo University
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Takahashi Hirokazu
Corporate R&D Laboratories, Pioneer Corporation, 6-1-1 Fujimi, Tsurugashima, Saitama 350-2288, Japan
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