The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-07-20

著者

• Watanabe Akio

  Ntional Institute Of Advanced Industrial Science And Technology

• HATA Masayuki

  Department of Physical Chemistry, Graduate School of Pharmaceutical Sciences, Chiba University

• Isu T

  Mitsubishi Electric Corp. Amagasaki‐shi Jpn

• Isu T

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Isu Toshiro

  Semiconductor Research Laboratory Mitsubishi Electric Corporation

• Isu Toshiro

  Optoelectronics Technology Research Laboratory

• Takemasa Keizo

  Opto-electronics Laboratories Research And Development Group Oki Electric Industry Co. Ltd.

• Kamijoh Takeshi

  Optoelectronics Technology Research Laboratory

• Kamijoh Takeshi

  Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.

• Kamihoh T

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• Kamijoh Takeshi

  Research And Development Group Oki Electric Industry Co. Ltd.

• Kamijoh Takeshi

  Optoelectronics Oki Laboratory Real World Computing Partnership C/o Semiconductor Technology Laborat

• Watanabe Akiko

  The Institute For Solid State Physics The University Of Tokyo

• KATAYAMA Yoshifumi

  Optoelectronics Technology Research Laboratory

• Watanabe A

  Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Hata Masayuki

  Faculty Of Pharmaceutical Sciences Chiba University

• Hata Masayuki

  Optoelectronics Technology Research Laboratory:(present Address)semiconductor Research Center Sanyo

• Katayama Y

  Murata Manufacturing Co. Ltd.

• Kamijoh T

  Oki Electric Co. Ltd. Hachioji‐shi Jpn

• WATANABE Akiyoshi

  Optoelectronics Technology Research Laboratory

• Watanabe Akiyoshi

  College Of General Education Tohoku University

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