Selective Area Epitaxial Growth of GaAs Using Metal Gallium and Trisdimethylaminoarsine
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概要
- 論文の詳細を見る
The selective area growth (SAG) of GaAs by gas-source molecular beam epitaxy (GSMBE) using metal gallium and trisdimethylaminoarsine (TDMAAs) has been investigated. GaAs growth was carried out at various substrate temperatures and TDMAAs beam equivalent pressures (BEP) on (001) GaAs substrates patterned with SiO_2, and a phase diagram for the selective and non-selective growth is presented. SAG was found to occur at elevated growth temperatures or high TDMAAs flow rates. The growth rate decreased with increasing TDMAAs BEP, and eventually etching of GaAs by TDMAAs was observed.
- 1995-03-01
著者
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Morishita Yoshitaka
Optoelectronics Technology Research Laboratory
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GOTO Shigeo
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
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JELEN Christopher
Optoelectronics Technology Research Laboratory
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JELEN Christopher
Optoelectronics Technology Research Laboratory:(Present address)Department of Electrical Engineering and Computer Science, Northwestem University
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