Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
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概要
- 論文の詳細を見る
Photoluminescence measurements have been performed in (100)- and (111)-oriented GaAs-AlGaAs quantum well structures (QWS) subject to an electric field perpendicular to the well plane. In the (111) QWS, the energy shift of the heavy hole exciton induced by an electric field was found to be larger than that in the (100) QWS having the same well width. This difference of electric field dependence between (100) and (111) QWS is well explained by theoretical calculations that consider the anisotropy of the heavy hole mass. Emission due to a "forbidden" transition has been also observed in the (111) QWS.
- 社団法人応用物理学会の論文
- 1989-06-20
著者
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Takemasa Keizo
Opto-electronics Laboratories Research And Development Group Oki Electric Industry Co. Ltd.
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Kamijoh Takeshi
Optoelectronics Technology Research Laboratory
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Kamijoh Takeshi
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Kamihoh T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Kamijoh Takeshi
Research And Development Group Oki Electric Industry Co. Ltd.
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Kamijoh Takeshi
Optoelectronics Oki Laboratory Real World Computing Partnership C/o Semiconductor Technology Laborat
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KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
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Katayama Y
Murata Manufacturing Co. Ltd.
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Kamijoh T
Oki Electric Co. Ltd. Hachioji‐shi Jpn
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SUGIYAMA Nao-haru
Optoelectronics Technology Research Laboratory
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KAJIKAWA Yasutomo
Optoelectronics Technology Research Laboratory
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Kajikawa Yasutomo
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation:(present) Department
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