Extreme Optical Anisotropy in (110) Quantum Wells Induced by [110] Uniaxial Stress

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-01

著者

• KAJIKAWA Yasutomo

  Optoelectronics Technology Research Laboratory

• Kajikawa Yasutomo

  Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation:(present) Department

関連論文

• A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
• Optical Matrix Elements in (110)-Oriented Quantum Wells
• Time-Resolved Photoluminescence Study on a Hetero Interface Formed by Direct Regrowth of GaAs on an Al_Ga_As Surface Prepared by an In Situ HCl Gas Etching Process
• Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
• Extreme Optical Anisotropy in (110) Quantum Wells Induced by [110] Uniaxial Stress

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