A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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Isu T
Mitsubishi Electric Corp. Amagasaki‐shi Jpn
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Isu T
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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Isu Toshiro
Optoelectronics Technology Research Laboratory
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Takemasa Keizo
Opto-electronics Laboratories Research And Development Group Oki Electric Industry Co. Ltd.
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Kamijoh Takeshi
Optoelectronics Technology Research Laboratory
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Kamijoh Takeshi
Opto-electronics Laboratories R&d Group Oki Electric Industry Co. Ltd.
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Kamihoh T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Kamijoh Takeshi
Research And Development Group Oki Electric Industry Co. Ltd.
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Kamijoh Takeshi
Optoelectronics Oki Laboratory Real World Computing Partnership C/o Semiconductor Technology Laborat
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KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
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Katayama Y
Murata Manufacturing Co. Ltd.
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Kamijoh T
Oki Electric Co. Ltd. Hachioji‐shi Jpn
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SUGIYAMA Nao-haru
Optoelectronics Technology Research Laboratory
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KAJIKAWA Yasutomo
Optoelectronics Technology Research Laboratory
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Kajikawa Yasutomo
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation:(present) Department
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