Current Imaging Tunneling Spectroscopy of Thin n-GaAs/p-GaAs Multilayer Structures in Air

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-07-20

著者

• Kato Takayoshi

  Reseach Institute Of Electronics Shizuoka University

• Kato T

  Graduate School Of Engineering Nagoya University

• Kato Takayoshi

  Research Institute Of Electronics Shizuoka University

• Koshikawa Takanori

  Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic

• TANAKA Ichiro

  Optoelectronics Technology Research Laboratory (OTL)

• Kato T

  Ashikaga Inst. Technol. Tochigi

• Kato T

  Optoelectronics Technology Research Lab. Ibaraki

• Osaka Fukunobu

  Optoelectronics Technology Research Laboratory

• Osaka Fukunobu

  Fujitsu Laboratories Ltd.

• Tanaka I

  Department Of Materials Science And Engineering Kyoto University

• Tanaka I

  Univ. Tokyo Tokyo Jpn

• Kondo T

  Graduate School Of Science Nagoya University

• KATO Takashi

  Optoelectronics Technology Research Laboratory

• SUGIYAMA Nao-haru

  Optoelectronics Technology Research Laboratory

• Osaka F

  Optoelectronics Technology Research Lab. Ibaraki

• Osaka F

  Optoelectronics Technology Research Laboratory

• Kato Takashi

  Optoelectronics Sumiden Laboratory Rwcp C/o Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.

関連論文

• Super-High Brightness and High-Spin-Polarization Photocathode
• Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
• Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
• Effects of Oxygen Vacancy Diffusion on Leakage Characteristics of Pt/(Ba_Sr_)TiO_3/Pt Capacitor
• Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630℃
• ANALYSIS OF THE GENES ENCODING PLASMA MEMBRANE AQUAPORINS IN CARROT (DAUCUS CAROTA) SOMATIC AND ZYGOTIC EMBRYOGENESIS
• Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
• Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
• Adiabatic Compressibility of Aqueous Solutions of Amphiphiles with an Ammonium Group as the Hydrophilic Domain
• Molecular Arrangement at Cleaved Single-Crystal Surface of Steraric Acid Observed by Atomic Force Microscope
• Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
• Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
• Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
• Ultrasonic and NQR Studies of Structural Phase Transitions and Superconductivity in La_(Ba, Sr)_xCuO_4 : II-C Neutron Scattering, NMR and NQR and Ultrasonics : II Oxide Superconductors; Experiments II : Electronic States
• Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
• Time and Energy Responses of Liquid-Xenon Scintillation Chamber for ^Ne Ion Beam at 135A MeV
• Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_In_xAs_yP_ Alloy System
• Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation
• Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
• Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
• Studies on Spread Monolayers and LB Films of Long-Chain Alkylchlorosilanes by Brewster Angle Microscopy and X-Ray Photoelectron Spectroscopy
• Development of a Precisely Temperature-Programmable Langmuir Trough for Measuring Properties of Insoluble Monolayers at the Water Surface as Functions of Temperature
• Hydrogen Formation during Wet Grinding of Alumina and Silicon Carbide
• Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
• Isolation and Characterization of Six Abscisic Acid-Inducible Genes from Carrot Somatic Embryos
• 16×16 Two-Dimensional Optoelectronic Integrated Receiver Array for Highly Parallel Interprocessor Networks
• New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
• Optical Properties of (InAs)_1/(GaAs)_m Strained-Layer Superlattices
• Interference Effects on Photoreflectance Line Shapes of Excitons in GaAs/AlAs Superlattices
• Photoluminescence Properties of GaAs / AlAs Short-Period Superlattices
• Electronic Transport Properties of ZrTiO_4 at High Temperature ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Ultrasonic Studies of a Single Crystalline La_Sr_CuO_4 in High Magnetic Fields(Transport and Fermiology)
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Enhancement of Critical Magnetization Current by the Electron Irradiation in Ba_2YCu_3O_7 Superconductor
• Enhanced Critical Magnetization Currents due to Electron Irradiation in High-T_c Oxide Superconductors
• Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun
• High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
• Spin-Dependent Luminescence of Highly Polarized Electrons Generated by Two-Photon Absorption in Semiconductors : Optical Properties of Condensed Matter
• Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
• Spin Dependent Luminescence of GaAs Thin Layers under Tensile Strain and Compressive Strain Induced by Interface ess
• Circular Polarization of Photoluminescence Excitation Spectra of Strained GaAs Layer
• Electron Beam Direct Writing Techniques for the Development of Sub-Quarter-Micron Devices
• Application of Proximity Effect Correction Usirng Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure
• A Low-Temperature X-Ray Diffraction Study of Structural Phase Transition in La_Sr_CuO_4
• Estimation of Grown Layer Thickness by Cathodoluminescence Measurement
• High-T_c(Bi, Pb)_2Sr_2Ca_2Cu_3O_ Superconducting Magnet Operated Using 20 K Gifford-McMahon-Type Refrigerator
• Microstructures and J_c-B Characteristics of Ag-Sheathed Bi-Based Superconducting Wires
• Current Imaging Tunneling Spectroscopy of Thin n-GaAs/p-GaAs Multilayer Structures in Air
• An ESR Study of YBa_2Cu_3O_ and Y_2BaCuO_5 with Oxygen Deficiencies : Electrical Properties of Condensed Matter
• Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
• Observation of Ga_InAs/InP Multiquantum Well Structure in Air by Scanning Tunneling Microscope : Surfaces, Interfaces and Films
• Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
• preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
• A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
• Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
• Shape of the GaInAs/InP Multiquantum Well Potential Observed by Scanning Tunneling Microscopy
• Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
• Homogeneity of Single Crystal of High-T_c Superconductor La_Sr_xCuO_4
• Characterization of Single Crystals of High-T_c Superconductor La_Sr_xCuO_4
• Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
• Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
• Comparison of Energy-Loss Functions from Reflection Electron Energy-Loss Spectroscopy Spectra with Surface and Bulk Energy-Loss Functions: in Case of Cu
• GaAs Heteroepitaxial Growth on an InP (001) Substrate
• Macroscopic Single-Domain Graphene Growth on Polycrystalline Nickel Surface
• Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces

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