Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630℃
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Kato T
Graduate School Of Engineering Nagoya University
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Matsumoto T
Osaka Univ. Osaka
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KATO Takamasa
Faculty of Engineering, Yamanashi University
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MATSUMOTO Takashi
Faculty of Engineering, Yamanashi University
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OGURA Hiroyuki
Faculty of Engineering, Yamanashi University
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Kato T
Optoelectronics Technology Research Lab. Ibaraki
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Kato T
Faculty Of Engineering Yamanashi University
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Ogura Hiroyuki
Faculty Of Engineering Yamanashi University
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Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Matsumoto Takashi
Faculty Of Engineering Department Of Electronic Engineering Yamanashi University
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Kato Takamasa
Faculty Of Engineering Department Of Electronic Engineering Yamanashi University
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Kondo T
Graduate School Of Science Nagoya University
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Matsumoto Takashi
Faculty Of Engineering Yamanashi University
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Matsumoto Takuya
Isir Osaka Univ.
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Matsumoto Takashi
Faculty Of Agriculture Shinshu University
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