Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-05-20
著者
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Matsumoto Takashi
Department of Gynecologic Oncology, Shikoku Cancer Center
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Matsumoto T
Osaka Univ. Osaka
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ISHIDA Tetsuro
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
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KATO Takamasa
Faculty of Engineering, Yamanashi University
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KATO Takamasa
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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HOSOKI Mitsuru
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Kato T
Shizuoka Univ. Hamamatsu Jpn
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Ishida T
Mitsubishi Electric Corp. Hyogo Jpn
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Kato T
Faculty Of Engineering Yamanashi University
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Kato Takamasa
Department Of Electrical Engineering Yamanashi University
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Hosoki Mitsuru
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Ishida Toshio
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University:(present Addres
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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