Temperature Dependence of Photoluminescence from GaN
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概要
- 論文の詳細を見る
Photoluminescence intensities, energies, and band shapes of GaN needle crystals are studied as a function of temperature in the range of 4.2-300 K. An emission at 3.472 eV due to a bound exciton localized at a neutral donor site (so-called I_2 line) dominates the spectrum at 4.2 K. A donor-acceptor pair recombination band is observed near 3.27 eV. The I_2 line quenches with an activation energy of 10±1 meV in the temperature range of 30-80 K, and is not observed at higher temperatures. The activation energy corresponds to the localization energy of the I_2-line exciton. The donor-acceptor band quenches at temperatures above 150 K with an activation energy of 160±20 meV, which corresponds to the acceptor binding energy.
- 社団法人応用物理学会の論文
- 1974-11-05
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Matsumoto Takashi
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address)dep
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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