Solution Growth of CuGaS_2 Using In as a Solvent under Controlled S Vapor Pressure
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概要
- 論文の詳細を見る
Growth of CuGaS_2 bulk crystals by the temperature difference method under controlled S vapor pressure has been investigated. The synthesized crystals were CuGa_xIn_<1-x>S_2 solid solutions, and the In alloy composition, 1-x, depended on both the growth temperature and the S vapor pressure.
- 社団法人応用物理学会の論文
- 1994-09-15
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Kato T
Fukuoka Inst. Technol. Fukuoka Jpn
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Kato Takamasa
Department Of Electrical Engineering Yamanashi University
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HAGIMOTO Kazunori
Department of Electrical-Engineering and Computer Science, Faculty of Engineering, Yamanashi Univers
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Hagimoto K
Nagoya Inst. Technol. Nagoya Jpn
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Matsumoto Takashi
Department Of Electrical-engineering And Computer Science Faculty Of Engineering Yamanashi Universit
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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