Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga_2O_3
スポンサーリンク
概要
- 論文の詳細を見る
Absorption and reflection spectra of β-Ga_2O_3 are measured with polarized light in the wavelength region near its absorption edge. The crystals of β-Ga_2O_3 are grown by using a Ga/HCl/O_2/Ar vapor reaction system. The platelike crystals of β-Ga_2O_3 have (100), (010), and (001) surfaces, and the major surface is (100). The energies of the absorption edge are observed to be 4.90 eV for E//b, 4.54 eV for E//c, and 4.56 eV for E⊥b&c at room temperature. The energies for E//b and for E//c at 77 K are larger than those at room temperature by 40 meV and 220 meV, respectively. Reflection minima are observed at 5.06 eV and 5.30 eV for E//b, and at 4.63 eV and 5.30 eV for E//c at room temperature.
- 社団法人応用物理学会の論文
- 1974-10-05
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Aono Tomoyoshi
Department Of Applied Science Faculty Of Engineering Tokyo Denki University
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Aoki Masaharu
Department Of Electric Engineering Science University Of Tokyo
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Kinoshita Akira
Department Of Applied Science Tokyo Electrical Engineering College
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Kinoshita Akira
Department Of Applied Science Faculty Of Engineering Tokyo Electrical Engineering College
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Matsumoto Takashi
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo:(present Address)dep
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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Aoki Masaharu
Department of Applied Electronics Engineering, Faculty of Industrial Science and Technology, Yamazaki, Noda-shi, Chiba 278
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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