Vapor Phase Epitaxial Growth of ZnSe Using Zinc and Selenium as Source Materials
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概要
- 論文の詳細を見る
Epitaxial layers of ZnSe have been grown on GaAs substrates at temperatures of 550-850℃ in a hydrogen flow system using zinc and selenium as the source materials. The layers on the (111) Ga faces show flat-topped triangular growth patterns and have the twinned zincblende structure. The layers on the (111) As faces grown at temperatures above 700℃ show triangular growth pyramids and have the twin-free zincblende structure, while those grown at temperatures below 700℃ have the twinned zincblende structure. The photoluminescence spectrum at 80 K consists of the exitonic band at 2.79 eV, the free-to-bound band at 2.70 eV and deep-level emission bands at 2.2 and 2.0 eV. The deep-level emission bands decrease in intensity as the growth temperature is lowered.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Nonaka Hideyuki
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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