Effects of Built-In Strain on Luminescence and Absorption Spectra of GaN Epitaxial Crystals
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概要
- 論文の詳細を見る
Emission and absorption spectra of GaN epitaxial crystals are examined in the near-gap region. Emission bands are observed at 3.472 eV at 4.2 K. They shift to the hige-energy side with a decrease in the crystal thickness. The energy of the emission-intensity maximum is observed to vary within 〜100 meV among the samples. From the measurement of the spectra of the emission from the interface of the epitaxial crystal and sapphire substrate, it is found that the spectra are affected by the built-in strain in the crystals resulting from the difference in the thermal expansion coefficient between GaN and sapphire. The magnitude of the compressive strain is estimated to be up to 5×10^<-3>, which is expected to enlarge the band gap of GaN by about 40 meV.
- 社団法人応用物理学会の論文
- 1974-10-05
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Aoki Masaharu
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Matsumoto Takashi
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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Aoki Masaharu
Department of Applied Electronics Engineering, Faculty of Industrial Science and Technology, Yamazaki, Noda-shi, Chiba 278
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