Low Pressure Vapor Phase Epitaxy of High Purity ZnSe Using Metallic Zinc and Selenium as Source Materials
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概要
- 論文の詳細を見る
High-purity ZnSe layers have been grown on GaAs(100) substrates at 420℃ by low pressure (〜21 kPa) vapor phase epitaxy using metallic zinc and selenium as starting source materials. Zinc vapor and H_2Se gas produced by a reaction between selenium and hydrogen are transported into a crystal growth region by H_2 carrier gas. Growth rates are 0.05〜0.3 μm/h, and dependent on source transport rates. When the source transport rates are controlled at Zn=Se=1〜3 μmol/min, free exciton emissions dominate 4.2 K photoluminescence spectra, and emissions due to donor-bound excitons and deep level defects become very weak.
- 社団法人応用物理学会の論文
- 1987-03-20
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Kobayashi Nobuo
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Kobayashi Nobuo
Deparment Of Physics Faculty Of Science Tokyo Metropolitan University
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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