Toward Epitaxial Growth of CuGaS_2 on GaAs(001) Substrates by Chloride Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Growth conditions for achieving epitaxy of CuGaS_2 on GaAs (001) substrates by chloride chemical vapor deposition have been discussed. The a-axis growth, which should be excluded for epitaxial growth, was suppressed by lowering substrate temperatures and by reducing carrier gas flow rates during a heating up period before the beginning of layer growth.
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
-
Kato Takamasa
Department Of Electrical Engineering Yamanashi University
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Pu Yong
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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