Growth of High-Quality ZnSe Layers in Hydrogen Plasma
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概要
- 論文の詳細を見る
High-quality ZnSe layers have been grown on (100) GaAs substrates at a temperature as low as 320℃ in hydrogen plasma using metallic Zn and Se as source materials. ZnSe layers grow coherently on GaAs substrates up to epitaxial-layer thicknesses of about 0.2 μm. The growth rate is about 1.4μm/h. The photoluminescence spectrum at 4.2K is dominated by a neutral-donor bound exciton emission at 2.7966 eV and a free exeiton emission with lower and upper polariton peaks. The near-bandgap emission dominates the spectrum even at room temperature, deep-center emissions being very weak.
- 社団法人応用物理学会の論文
- 1986-05-20
著者
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Yoshida Shigeki
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Yoshida Shigeki
Department of Applied Chemistry, Institute of Colloid and Interface Science, Science University of Tokyo
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