ISHIDA Tetsuro | Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
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概要
関連著者
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ISHIDA Tetsuro
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
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Ishida Tetsuro
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Matsumoto Takashi
Department of Gynecologic Oncology, Shikoku Cancer Center
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Matsumoto Takashi
Department Of Cardiology Kyoto First Red Cross Hospital
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Matsumoto Takashi
Department Of Applied Physics Waseda University
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Sciences, University of Tokushima
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Matsumoto T
Osaka Univ. Osaka
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KATO Takamasa
Faculty of Engineering, Yamanashi University
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KATO Takamasa
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Kato T
Shizuoka Univ. Hamamatsu Jpn
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Ishida T
Mitsubishi Electric Corp. Hyogo Jpn
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Kato T
Faculty Of Engineering Yamanashi University
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Kato Takamasa
Department Of Electrical Engineering Yamanashi University
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Ishida Toshio
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University:(present Addres
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Matsumoto Takashi
Department of Applied Material Science, Faculty of Integrated Arts and Science, University of Tokushima
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堀 勝
名古屋大学大学院工学研究科電子情報システム専攻
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ITO Masafumi
Department of Pathology, Japanese Red Cross Nagoya Daiichi Hospital
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Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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Hori Masaru
Department Of Quantum Engineering Nagoya University
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伊藤 昌文
名城大学理工学部
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GOTO Toshio
Department of Quantum Engineering, Nagoya University
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OHTA Takayuki
Department of Quantum Engineering, Graduate School of Engineering, Nagoya University
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Ishida Toshimasa
Research Laboratory Oki Electric Industry Co. Lid
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Ishida Tetsuro
Department Of Quantum Engineering Graduate School Of Engineering Nagoya University
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Ishida Takayuki
Department Of Radiology National Federation Of Health Insurance Societies Osaka Chuo Hospital
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Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
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IIJIMA Takayuki
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Matsumoto Takuya
Isir Osaka Univ.
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KAWAKAMI Satoru
Tokyo Electron AT Ltd.
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HOSOKI Mitsuru
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Hosoki Mitsuru
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University
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Yoshioka Yasuhiro
Department of Pharmacotherapeutics, Faculty of Pharmaceutical Sciences, Setsunan University, Japan
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Ishida Tadashi
National Institute Of Advanced Industrial Science And Technology
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KAWAKAMI Satoshi
Tokyo Electron Tohoku Ltd.
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ISHII Nobuo
Central Research Laboratory, Tokyo Electron Ltd.
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KOBATAKE Takaaki
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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KOBAYASHI Masaya
Department of Electronic Enginnering, Faculty of Engineering, Yamanashi University
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Goto T
Graduate School Of Pharmaceutical Sciences Tohoku University
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Goto Takaaki
Department Of Electric Engineering Tokyo University Of Agriculture And Technology
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Hori Masaru
Department Of Electrical Engineering And Computer Science Graduate School Of Engineering Nagoya Univ
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Hori Masaru
School Of Engineering Nagoya University
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Yoshioka Yasuhiro
Department Of Electronic Enginnering Faculty Of Engineering Yamanashi University:(present Address)cl
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Ishii Nobuo
Corporate R&d Central Research Laboratory Tokyo Electron Ltd.
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Ohta Takayuki
Department Of Quantum Engineering Graduate School Of Engineering Nagoya University
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Ohta Takayuki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Ishida T
Department Of Electronic Engineering Yamanashi University:(present Address) Faculty Of Science And T
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Kobayashi Masaya
Department Of Electronic Enginnering Faculty Of Engineering Yamanashi University
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KATSUMATA Yoshihito
Department of Electronic Engineering, Faculty of Engineering, Yamanashi University
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Ito Masafumi
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo Universi
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ITO Yuuji
Department of Electronic Engineering, Yamanashi University
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Goto Toshio
Department Of Electronics Faculty Of Engineering Nagoya University
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Ito Yuuji
Department Of Electronic Engineering Yamanashi University:(present Address) Nec Corporation
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Katsumata Yoshihito
Department Of Electronic Engineering Faculty Of Engineering Yamanashi University:(present Address) Y
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後藤 俊夫
Imram Tohoku University
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Goto Toshio
Department Of Electronic Mechanical Engineering Nagoya University
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Matsumoto Takashi
Department Of Electronic Engineering Yamanashi University
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Ohta Takayuki
Department Of Electrical And Electronic Engineering Faculty Of Science And Technology Meijo University
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GOTO Toshio
Department of Agricultural Chemistry, Faculty of Agriculture, Nagoya University
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Ohta Takayuki
Department of Chemistry, Graduate School of Science, The University of Tokyo
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Yoshioka Yasuhiro
Department of Chemistry, Faculty of Science, The University of Tokyo
著作論文
- Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH_4 Plasma with Ar, N_2, and H_2 Dilution Gases
- Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
- Effects of Driving Frequency on the Translational Temperature and Absolute Density of Si Atoms in Very High Frequency Capacitively Coupled SiF_4 Plasmas
- Raman Spectral Behavior of In_Ga_xP (0
- Strain-Induced Shift of Optical Phonon Frequency in InGaP Layers Grown on GaAs Substrates
- Strain-Energy-Stabilized Growth of InGaAsP Layers on GaAs (111)A Substrates in Immiscible Region
- Narrow Photoluminescence Spectra in InGaAsP/GaAs (001) LPE Layers Grown in the Immiscible Region
- Photoluminescence of InGaP/GaAs (111) LPE Layers with Elastic Strain due to Lattice Mismatch
- Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
- Influence of Phosphorus Evaporation from Melt on InGaP/GaAs LPE Growth
- LPE Growth of In_Ga_xAs_P_y with Narrow Photoluminescence Spectrum on GaAs (111)B Substrates
- Photoluminescence Processes of Zn-Doped In_Ga_xP with 0.6
- Electrical Properties of Zn-Doped In_Ga_xP
- Luminescence of Zn Diffused In_ ,Ga_xP in the Direct Transition Region
- Near-Bandgap Photoluminescence in Te-Doped In_Ga_xP (0.2≲x≲0.5)
- Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer : Semiconductors and Semiconductor Devices
- Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer thickness and Growth Temperature : Semiconductors and Semiconductor Devices
- Electrical and Luminescent Properties of In-Doped ZnSe Grown by Low-Pressure Vapor-Phase Epitaxy
- Interface States in n-ZnSe/n-GaAs Heterostrueture Characterized by Deep Level Transient Spectroscopy Technique