Ohta Takayuki | Department Of Electronic Engineering Faculty Of Engineering Osaka University

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著作論文

Effects of Ar Dilution and Exciting Frequency on Absolute Density and Translational Temperature of Si Atom in Very High Frequency-Capacitively Coupled SiH_4 Plasmas
Contact Electrification on Thin SrTiO_3 Film by Atomic Force Microscope
Structural and Electronic Properties of Adsorbed Thiophene on Cu(111) Studied by S K-Edge X-Ray Absorption Spectroscopy
Surface Structure of N/Pd(100)-c(2 × 2) Determined by Tensor Low Energy Electron Diffraction Analysis
Structure, Composition, and Vibrational Property of Iodine-Doped Polyvinyl Alcohol Studied by Temperature-Dependent I K-Edge Extended X-Ray-Absorption Fine Structure
Local Structures of RbBr_xCl_ and CuBr_xCl_ Solid Solutions Studied by Temperature-Dependent Br K-Edge Extended X-Ray-Absorption Fine-Structure Spectroscopy
X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
New Computed Tomography Algorithm of Electrostatic Force Microscopy Based on the Singular Value Decomposition Combined with the Discrete Fourier Transform
Simulated Computed Tomography for the Reconstruction of Vacancies Using an Atomic Force Microscope Image
Stability of Densely Contact-Electrified Charges on Thin Silicon Oxide in Air
Feasibility Study on a Novel Type of Computerized Tomography Based on Scanning Probe Microscope
Phase Transition of Contact-Electrified Negative Charges on a Thin Silicon Oxide in Air
Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
Potentiometry Combined with Atomic Force Microscope
Charge Storage on Thin SrTiO_3 Film by Contact Electrification ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
Study of Pulse Erasing on Phase-Change Erasable (PCE) Sampled Servo Disc : Media
New Disk Structure for Million Cycle Overwritable Phase Change Optical Disk
Conformal Chermical Vapor Deposition TiN(111) Film Formation as an Underlayer of Al for Highly Reliable Interconnects
Characterization of Direct-Contact Via Plug Formed by Using Selective Aluminum Chemical Vapor Deposition
Improvement in Radiation Stability of SiN X-Ray Mask Membranes
Recording and Erasing Characteristics at a Wavelength of 680 nm for a Phase-Change Disk Designed for 830 nm Wavelength
Thin Injection-Molded Substrate for High Density Recording Phase-Change Rewritable Optical Disk
Metalorganic Chemical Vapor Deposition of Aluminum-Copper Alloy Films
Improvement of Gap-Filling Property of O_3-tetraethylorthosilicate (TEOS) Film by Ethanol Surface Treatment
Optically High Transparent SiN Mask Membrane with Low Stress Deposited by Low Pressure Chemical Vapor Deposition
Low-Coherence Interferometry-Based Non-Contact Temperature Monitoring of a Silicon Water and Chamber Parts during Plasma Etching
Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
Dissipation of Contact Electrified Electrons on Dielectric Thin films with Silicon Substrate
Asymmetric Hydroformylation of Olefins in Higyly Crosslinked Polymer Matrixes
Heat Treatment and Steaming Effects of Silicon Oxide upon Electron Dissipation on Silicon Oxide Surface
Contact Electrification on Thin Silicon Oxide in Vacuum
Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
Reproducible and Controllable Contact Electrification on a Thin Insulator
Inactivation of Penicillium digitatum Spores by a High-Density Ground-State Atomic Oxygen-Radical Source Employing an Atmospheric-Pressure Plasma

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