CHAYAHARA Akiyoshi | Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology

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著作論文

High-Dose Implantation of MeV Carbon Ion into Silicon
Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
Ion-Beam 3C-SiC Heteroepitaxy on Si
Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
Role of Hydrogen in Improvement of the Critical Temperature of Ceramic YBa_2Cu_3O_ by Proton Implantation
Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
Diffusivities and Activities of S Implanted into GaAs through an As-doped a-Si:H Film
Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide

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