Kinomura A | National Institute Of Advanced Industrial Science And Technology
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概要
- Kinomura Atsushiの詳細を見る
- 同名の論文著者
- National Institute Of Advanced Industrial Science And Technologyの論文著者
関連著者
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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KINOMURA Atsushi
Osaka National Research Institute, AIST
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Chayahara Akiyoshi
Department Of Electrical Engineering Hiroshima University
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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CHAYAHARA Akiyoshi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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Chayahara Akiyoshi
Government Industrial Research Institute Osaka
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HORINO Yuji
Osaka National Research Institute, AIST
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TSUBOUCHI Nobuteru
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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CHAYAHARA Akiyoshi
AIST Kansai
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Tsubouchi Nobuteru
Laboratory Of Purified Materials National Institute Of Advanced Industrial Science And Technology
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Namba S
Inst. Physical And Chemical Research Wako
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Namba Susumu
Nagasaki Institute Of Applied Science
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Namba Susumu
Frontier Research Program Riken
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Heck Claire
National Institute Of Advanced Industrial Science And Technology Aist Kansai Laboratory Of Purified
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Nagatomo S
Shizuoka Univ. Shizuoka Jpn
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Satoh Minoru
Nagaoka University Of Technology
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ABIKO Kenji
Institute for Materials Research, Tohoku University
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Satoh M
Tohoku Univ. Sendai Jpn
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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CHAYAHARA Akiyoshi
Government Industrial Research Institute
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FUJII Kanenaga
Government Industrial Research Institute
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SATOU Mamoru
Government Industrial Research Institute
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TAKAI Mikio
Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials
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NAMBA Susumu
Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials
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MOKUNO Yoshiaki
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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TSUBOUCHI Nobuteru
Osaka National Research Institute
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CHAYAHARA Akiyoshi
Osaka National Research Institute
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HECK Claire
Osaka National Research Institute
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Takai Mikio
Osaka Univ. Osaka Jpn
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Abiko Kenji
Institute For Materials Research Tohoku University
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Satou Mamoru
Goverment Industrial Research Institute
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Mokuno Y
Laboratory Of Purified Materials National Institute Of Advanced Industrial Science And Technology
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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HAYASHI Yoshihiko
Research Reactor Institute, Kyoto University
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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TAKAKI Seiichi
Institute for Materials Research, Tohoku University
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Takai M
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Ohno Y
Nagoya Univ. Naogya Jpn
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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KISHIMOTO Takehisa
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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SONODA Kenichirou
ULSI Laboratory, Mitsubishi Electric Corporation
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FUJII Kanenaga
Osaka National Research Institute, AIST
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KIUCHI Masato
Government Industrial Research Institute
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MATSUO Takahiro
Osaka University, Faculty of Engineering Science and Research Center for Extreme Materials
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KINOMURA Atsushi
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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HORINO Yuji
Laboratory of Purified Materials, National Institute of Advanced Industrial Science and Technology
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NAKANO Yukihiro
Research Reactor Institute, Kyoto University
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Kiuchi M
National Inst. Advanced Industrial Sci. And Technol. Osaka Jpn
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Takaki Seiichi
Institute For Materials Research Tohoku University
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Sayama H
Mitsubishi Electric Corp. Hyogo Jpn
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Kishimoto T
Department Of Physics Osaka University
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Kishimoto T
Department Of Electrical Engineering Waseda University
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Nakano Yukihiro
Research Reactor Institute Kyoto University
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Takaki S
Institute For Materials Research Tohoku University
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Hayashi Y
Research Reactor Institute Kyoto University
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Chayahara Akiyoshi
Laboratory Of Purified Materials National Institute Of Advanced Industrial Science And Technology
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Sonoda K
Ulsi Development Center Mitsubishi Electric Corporation
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Takai Mikio
Faculty Of Engineering Science And Reseatch Center For Extreme Materials
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Hayashi Yoshihiko
Research Reactor Institute Kyoto University
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Park Y‐k
Samsung Electronics Gyeonggi‐do Kor
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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NAKAYAMA Kouichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA Hiromichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
ONRI, AIST
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HORINO Yuji
ONRI, AIST
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Chun Sung-yong
Department Of Materials Physics Osaka National Research Institute Aist
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Namba S
Japan Atomic Energy Res. Inst. Kyoto Jpn
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Namba S
Osaka Univ. Osaka
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Namba Susumu
Faculty Of Engineering Science Osaka University
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Satoh Masaharu
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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CHAYAHARA Akiyoshi
Department of Electrical Engineering, Faculty of Engineering, Hiroshima University
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PARK Yang-Keun
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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SAYAMA Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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SAYAMA Hirokazu
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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HORINO Yuji
Government Industrial Research Institute
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KINOMURA Atsushi
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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Yamaguchi Y
Central Workshop Osaka University
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KINOMURA Atsushi
Department of Materials Physics, Osaka National Research Institute
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TSUBOUCHI Nobuteru
Department of Materials Physics, Osaka National Research Institute
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HECK Claire
Department of Materials Physics, Osaka National Research Institute
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HORINO Yuji
Department of Materials Physics, Osaka National Research Institute
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CHUN Sung-Yong
Osaka National Research Institute
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FUKUI Hirotaka
Adachi New Industrial Co., Ltd.
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KINOMURA Atsushi
Government Industrial Research Institute Osaka
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MOKUNO Yoshiaki
Government Industrial Research Institute Osaka
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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Satoh M
Department Of Physics Faculty Of Science Okayama University
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Nonoyama Shinji
Quantum Material Research Laboratory Frontier Research Program The Institute Of Physical And Chemica
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Namba Susumu
Research Center For Extreme Materials And Department Of Electrical Engineering Osaka University
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
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Fukui Hirotaka
Adachi New Industrial Co. Ltd.
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Sayama Hirokazu
Ulsi Development Center Mitsubishi Electric Corporation
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Sayama Hirokazu
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Horino Yuji
Department Of Crystalline Materials Science Faculty Of Engineering Nagoya University
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Kinomura Atsushi
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University:(present A
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Namba Susumu
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Tsubouchi Nobuteru
Department Of Material Physics Osaka National Research Institute
著作論文
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
- Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- Tomography of Microstructures by Scanning Micro-RBS Probe
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations : Nuclear Science, Plasmas and Electric Discharges
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam