Park Y‐k | Samsung Electronics Gyeonggi‐do Kor
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概要
関連著者
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Park Y‐k
Samsung Electronics Gyeonggi‐do Kor
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Takai M
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Takai Mikio
Faculty Of Engineering Science And Reseatch Center For Extreme Materials
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Kishimoto T
Department Of Physics Osaka University
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Kishimoto T
Department Of Electrical Engineering Waseda University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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LEHRER Christoph
Fraunhofer Institut fuer Integrierte Schaltungen
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FREY Lothar
Fraunhofer Institut fuer Integrierte Schaltungen
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RYSSEL Heiner
Fraunhofer Institut fuer Integrierte Schaltungen
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PARK Yang-Keun
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Nagai Tomonori
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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Nagai T
Department Earth And Space Science Graduate School Of Science Osaka University
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Ryssel Heiner
The Fraunhofer Institut Fur Integrierte Schaltungen Bauelementetechologie
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Horino Y
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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TAKAI Mikio
Faculty of Engineering Science, and Research Center for Extreme Materials, Osaka University
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Ohno Y
Nagoya Univ. Naogya Jpn
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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KISHIMOTO Takehisa
Research Center for Materials Science at Extreme Conditions and Faculty of Engineering Science, Osak
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KISHIMOTO Takehisa
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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PARK Yang-Keun
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University
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SONODA Kenichirou
ULSI Laboratory, Mitsubishi Electric Corporation
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SAYAMA Hirokazu
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
Osaka National Research Institute, AIST
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HORINO Yuji
Osaka National Research Institute, AIST
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FUJII Kanenaga
Osaka National Research Institute, AIST
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HORINO Yuji
National Institute of Advanced Industrial Science and Technology
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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PARK Yang-Neun
Research Center for Materials Science at Extreme Conditions, Osaka University
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NAGAI Takaaki
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Sayama H
Mitsubishi Electric Corp. Hyogo Jpn
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Sayama Hirokazu
Ulsi Development Center Mitsubishi Electric Corporation
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Horino Yuji
National Inst. Of Advanced Industrial Sci. And Technol. Kansai Osaka Jpn
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Takai Mikio
Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Sonoda K
Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
著作論文
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Microprobe Analysis of Pt Films Deposited by Beam Induced Reaction
- Microprobe Analysis of Pt Films Deposited by Beam Induced Reaction
- Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam
- Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam
- Well Structure by High Energy Boron Implantation for Soft Error Reduction in DRAMs