Horiba Yasutaka | System Lsi Laboratory Mitsubishi Electric Corporation

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概要

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著作論文

Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
An Embedded Software Scheme for a Real-Time Single-Chip MPEG-2 Encoder System with a VLIW Media Processor Core (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
A Design of High-Speed 4-2 Compressor for Fast Multiplier (Special Issue on Ultra-High-Speed LSIs)
Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
Focused High-Energy Heavy Ion Beams
Ion-Beam 3C-SiC Heteroepitaxy on Si
Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
Chemical State and Refractive Index of Mg-Ion-Implanted Silica Glass
Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology
A 90nm-node SOI Technology for RF Applications
A Single-Chip 2.4-GHz RF Transceiver LSI with a Wide-Input-Range Frequency Discriminator(Special Issue on Silicon RF Device & Integrated Circuit Technologies)
Metallic Alloy Coatings Using Coaxial Vacuum Arc Deposition
A 10 bit 50 MS/s CMOS D/A Converter with 2.7 V Power Supply (Special Section on Low-Power and Low-Voltage Integrated Circuits)
Transient Analysis of Switched Current Source

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