NAKASE Yasunobu | Renesas Technology
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概要
関連著者
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NAKASE Yasunobu
Renesas Technology
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Nakase Yasunobu
The System Lsi Laboratory Mitsubishi Electric Corporation
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Makino Hiroshi
Renesas Technology Corporation
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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NAKASE Yasunobu
Renesas Electronics Corp.
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IWADE Shuhei
Osaka Institute of Technology
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SUMI Tadashi
the System LSI Laboratory, Mitsubishi Electric Corporation
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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Suzuki H
Ntt Photonics Labs. Ntt Corporation
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Sumi T
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Sumi T
Department Of Obstetrics And Gynecology Osaka City University Medical School
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Suzuki H
Hiroshima Univ. Higashi‐hiroshima‐shi Jpn
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Shibagaki Takeshi
Renesas Technology
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
System LSI Development Center, Mitsubishi Electric Corporation
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SHIMADA Takahiro
Renesas Technology
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Nakase Yasunobu
System Lsi Development Center Mitsubishi Electric Corporation
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MORINAKA Hiroyuki
System LSI Laboratory, Mitsubishi Electric Corporation
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SUMI Tadashi
System LSI Laboratory, Mitsubishi Electric Corporation
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TAKATA Hidehiro
Renesas Technology
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Takata H
Renesas Technology
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Takata Hidehiro
Renesas Technol. Corp. Itami‐shi Jpn
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Suzuki Hiroaki
System Lsi Development Center Mitsubishi Electric Co.
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Shimizu Toru
Renesas Electronics Corp.
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Takata Hidehiro
Renesas Electronics Corporation
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Renesas Technol. Corp.
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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Notani H
Renesas Technology
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Nii Koji
Renesas Electronics Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Yoshida K
Renesas Technol. Corp. Itami‐shi Jpn
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Yoshida Kanako
Renesas Technology Corporation
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MAKINO Hiroshi
the System LSI Laboratory, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
the System LSI Laboratory, Mitsubishi Electric Corporation
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MORINAKA Hiroyuki
the System LSI Laboratory, Mitsubishi Electric Corporation
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MASHIKO Koichiro
the System LSI Laboratory, Mitsubishi Electric Corporation
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SHINOHARA Hirofumi
Headquarters, Mitsubishi Electric Corporation
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SHIMIZU Toru
Renesas Technology Corp.
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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KURAFUJI Takashi
Renesas Technology
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IMAMURA Yukinaga
Renesas Device Design
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AKIYAMA Rei
Renesas Device Design
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YAMANAKA Tadao
Renesas Device Design
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IWABU Atsushi
Renesas Device Design
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YASUDA Shutarou
Renesas Device Design
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MIWA Toshitsugu
Renesas Technology
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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KONDO Hiroyuki
Renesas Technology
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KOYAMA Masayuki
Renesas Technology
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Ipposhi Takashi
Renesas Technology Corp.
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Ipposhi Takashi
Renesas Technology Corporation
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Shinohara Hirofumi
Headquarters Mitsubishi Electric Corporation
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SATO Hisakazu
Renesas Technology Corporation
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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YAMADA Akira
Renesas Technology Corporation
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HIRANO Yuichi
Renesas Technology Corporation
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Akiyama Rei
Renesas Design Corporation
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Sumi Tadashi
The System Lsi Development Center Mitsubishi Electric Corporation
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Yamanaka T
Renesas Device Design
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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Shimizu Toru
Renesas Technology Corporation
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Shimizu Toru
Renesas Electronics Corporation
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Kondo Hiroyuki
Renesas Electronics Corporation
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IDO Yasuhiro
Renesas Electronics Corp.
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OISHI Tsukasa
Renesas Electronics Corp.
著作論文
- A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors(Low-Power System LSI, IP and Related Technologies)
- A Design of High-Speed 4-2 Compressor for Fast Multiplier (Special Issue on Ultra-High-Speed LSIs)
- A 286 MHz 64-b Floating Point Multiplier with Enhanced CG Operation
- A 2.6-ns 64-b Fast and Small CMOS Adder (Special Issue on Ultra-High-Speed LSIs)
- Selective-Sets Resizable Cache Memory Design for High-Performance and Low-Power CPU Core(Low-Power System LSI, IP and Related Technologies)
- A Low-Power Microcontroller with Body-Tied SOI Technology(Low-Power System LSI, IP and Related Technologies)
- On-Chip Single-Inductor Dual-Output DC-DC Boost Converter Having Off-Chip Power Transistor Drive and Micro-Computer Controlled MPPT Modes