AKIYAMA Rei | Renesas Device Design
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概要
関連著者
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TAKATA Hidehiro
Renesas Technology
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AKIYAMA Rei
Renesas Device Design
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IWADE Shuhei
Osaka Institute of Technology
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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Yamanaka T
Renesas Device Design
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Shibagaki Takeshi
Renesas Technology
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SHIMADA Takahiro
Renesas Technology
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KURAFUJI Takashi
Renesas Technology
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IWABU Atsushi
Renesas Device Design
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YASUDA Shutarou
Renesas Device Design
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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Akiyama Rei
Renesas Design Corporation
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Takata H
Renesas Technology
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Takata Hidehiro
Renesas Technol. Corp. Itami‐shi Jpn
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Takata Hidehiro
Renesas Electronics Corporation
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HARADA Ayako
Faculty of Pharmaceutical Sciences, Teikyo University
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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NAGATA Makoto
Department of Computer and Systems Engineering, Kobe University
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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Notani H
Renesas Technology
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Makino Hiroshi
Renesas Technology Corporation
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Matsuda Yoshio
System Lsi Laboratory Mitsubishi Electric Corporation
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Yoshimoto Masahiko
Mitsubishi Electric Corporation
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NAKASE Yasunobu
Renesas Technology
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NUNOMURA Yasuhiro
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SATO Hisakazu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITOH Niichi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KAGEMOTO Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITO Hironobu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIOKA Nobuharu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NAKANISHI Jingo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NOTANI Hiromi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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AKIYAMA Rei
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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IWABU Atsushi
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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SHIBAGAKI Takeshi
The author is with System LSI Division, Mitsubish Electric Corporation
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ARAKAWA Takahiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TOMISAWA Osamu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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IWADE Shuhei
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TAKATA Hidehiro
System LSI Development Center,Mitsubishi Electric Corporation
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AKIYAMA Rei
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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OHKUMA Haruyuki
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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SUETSUGU Yasue
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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KANAOKA Toshihiro
Electronic Devices Design Center, Mitsubishi Electric Engineering Corporation
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KUMAKI Satoshi
System LSI Development Center,Mitsubishi Electric Corporation
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ISHIHARA Kazuya
System LSI Development Center,Mitsubishi Electric Corporation
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HANAMI Atsuo
System LSI Development Center,Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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WATANABE Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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AJIOKA Yoshihide
System LSI Division, Mitsubishi Electric Corporation
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IWADE Syuhei
System LSI Development Center,Mitsubishi Electric Corporation
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Nakase Yasunobu
The System Lsi Laboratory Mitsubishi Electric Corporation
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Harada Ayako
Reproductive Pediatric And Infectious Science Yamaguchi University School Of Medicine
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Harada Ayako
Faculty Of Pharmaceutical Sciences Teikyo University
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Harada Ayako
Information Technology R&d Center Mitsubishi Electric Corporation
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Harada Ayako
Department Of Molecular Biodynamics The Tokyo Metropolitan Institute Of Medical Science (rinshoken)
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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IMAMURA Yukinaga
Renesas Device Design
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YAMANAKA Tadao
Renesas Device Design
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MIWA Toshitsugu
Renesas Technology
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KONDO Hiroyuki
Renesas Technology
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KOYAMA Masayuki
Renesas Technology
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Kurimoto Masanori
Renesas Technology Corporation
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Yoshimoto Masahiko
System Lsi Development Center Mitsubishi Electric Corporation
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SATO Hisakazu
Renesas Technology Corporation
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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Hanami Atsuo
System Lsi Development Center Mitsubishi Electric Corporation
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Sato Hisakazu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Kumaki Satoshi
System Lsi Development Center Mitsubishi Electric Corporation
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Tomisawa Osamu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Ishihara Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Yoshimoto M
Department Of Computer Science And Systems Engineering Kobe University
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Takata Hidehiro
System Lsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
Renesas Technology Corporation
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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FUKAZAWA Mitsuya
Department of Computer Science and Systems Engineering, Graduate School of Engineering, Kobe Univers
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Fukazawa Mitsuya
Department Of Computer Science And Systems Engineering Graduate School Of Engineering Kobe Universit
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Ajioka Yoshihide
System Lsi Division Mitsubishi Electric Corporation
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Matsumura T
System Lsi Development Center Mitsubishi Electric Corporation
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Ohkuma Haruyuki
Electronic Devices Design Center Mitsubishi Electric Engineering Corporation
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Nagata Makoto
Department Of Computer Science And Systems Engineering Graduate School Of Engineering Kobe Universit
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Watanabe T
Microsystem Integration Laboratories Ntt Corporation
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Kanaoka Toshihiro
Electronic Devices Design Center Mitsubishi Electric Engineering Corporation
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Matsuda Yoshio
System Lsi Development Center Mitsubishi Electric Corporation
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Nagata Makoto
Department Of Computer And Systems Engineering Kobe University
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Suzuki Hiroaki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
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Kondo Hiroyuki
Renesas Electronics Corporation
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NAKASE Yasunobu
Renesas Electronics Corp.
著作論文
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
- Physical Design Methodology for On-Chip 64-Mb DRAM MPEG-2 Encoding with a Multimedia Processor(Special Issue on High-Performance and Low-Power Microprocessors)
- Selective-Sets Resizable Cache Memory Design for High-Performance and Low-Power CPU Core(Low-Power System LSI, IP and Related Technologies)
- Experimental Evaluation of Dynamic Power Supply Noise and Logical Failures in Microprocessor Operations