TAKATA Hidehiro | The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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概要
- 同名の論文著者
- The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporationの論文著者
関連著者
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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TAKATA Hidehiro
Renesas Technology
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
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HARADA Ayako
Faculty of Pharmaceutical Sciences, Teikyo University
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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Shibagaki Takeshi
Renesas Technology
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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Notani H
Renesas Technology
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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Asano Ken-ichi
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Makino Hiroshi
Renesas Technology Corporation
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Yoshimoto Masahiko
Mitsubishi Electric Corporation
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SHIMADA Takahiro
Renesas Technology
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IWADE Shuhei
Osaka Institute of Technology
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NUNOMURA Yasuhiro
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SATO Hisakazu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITOH Niichi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KAGEMOTO Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITO Hironobu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIOKA Nobuharu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NAKANISHI Jingo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NOTANI Hiromi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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AKIYAMA Rei
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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IWABU Atsushi
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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SHIBAGAKI Takeshi
The author is with System LSI Division, Mitsubish Electric Corporation
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ARAKAWA Takahiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TOMISAWA Osamu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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IWADE Shuhei
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KUMAKI Satoshi
System LSI Development Center,Mitsubishi Electric Corporation
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ISHIHARA Kazuya
System LSI Development Center,Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KUMAKI Satoshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SEGAWA Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ISHIHARA Kazuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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HANAMI Atsuo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MATSUURA Yoshinori
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SCOTZNIOVSKY Stefan
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MURAYAMA Shu
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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WADA Tetsuro
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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OHIRA Hideo
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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SHIMADA Toshiaki
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIDA Toyohiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIMOTO Masahiko
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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TSUCHIHASHI Koji
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Harada Ayako
Reproductive Pediatric And Infectious Science Yamaguchi University School Of Medicine
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Harada Ayako
Faculty Of Pharmaceutical Sciences Teikyo University
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Harada Ayako
Information Technology R&d Center Mitsubishi Electric Corporation
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Harada Ayako
Department Of Molecular Biodynamics The Tokyo Metropolitan Institute Of Medical Science (rinshoken)
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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KURAFUJI Takashi
Renesas Technology
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AKIYAMA Rei
Renesas Device Design
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IWABU Atsushi
Renesas Device Design
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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Yoshimoto Masahiko
System Lsi Development Center Mitsubishi Electric Corporation
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Scotzniovsky Stefan
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Yoshida Takeshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Yoshida T
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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SATO Hisakazu
Renesas Technology Corporation
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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Ohira Hideo
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Hanami Atsuo
System Lsi Development Center Mitsubishi Electric Corporation
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Murayama Shu
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Sato Hisakazu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Kumaki Satoshi
System Lsi Development Center Mitsubishi Electric Corporation
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Yamanaka T
Renesas Device Design
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Segawa Hiroshi
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Tomisawa Osamu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Ishihara Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Yoshimoto M
Department Of Computer Science And Systems Engineering Kobe University
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Takata H
Renesas Technology
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Sato H
Ntt Microsystem Integration Laboratories
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Matsumura T
System Lsi Development Center Mitsubishi Electric Corporation
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Shimada Toshiaki
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Yoshida Toyohiko
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Tsuchihashi K
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Suzuki Hiroaki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
著作論文
- A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller