Makino H | Mitsubishi Electric Corp. Itami‐shi Jpn
スポンサーリンク
概要
関連著者
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Makino Hiroshi
Renesas Technology Corporation
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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MAKINO Hiroshi
System LSI Development Center, Mitsubishi Electric Corporation
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NAKASE Yasunobu
Renesas Technology
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IWADE Shuhei
Osaka Institute of Technology
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Nakase Yasunobu
The System Lsi Laboratory Mitsubishi Electric Corporation
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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SUZUKI Hiroaki
System LSI Development Center, Mitsubishi Electric Corporation
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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Suzuki H
Ntt Photonics Labs. Ntt Corporation
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Suzuki H
Hiroshima Univ. Higashi‐hiroshima‐shi Jpn
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Suzuki Hiroaki
System Lsi Development Center Mitsubishi Electric Co.
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Notani H
System Lsi Laboratory Mitsubishi Electric Corporation
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Notani Hiromi
Renesas Technology
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Notani Hiromi
Lsi Laboratory Mitsubishi Electric Corporation
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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Notani H
Renesas Technology
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Nii Koji
Renesas Electronics Corporation
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SUMI Tadashi
the System LSI Laboratory, Mitsubishi Electric Corporation
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Sumi T
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Sumi T
Department Of Obstetrics And Gynecology Osaka City University Medical School
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Shibagaki Takeshi
Renesas Technology
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SHIMADA Takahiro
Renesas Technology
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NOTANI Hiromi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TOMISAWA Osamu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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IWADE Shuhei
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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Nakase Yasunobu
System Lsi Development Center Mitsubishi Electric Corporation
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SHINOHARA Hirofumi
Renesas Technology Corporation
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MORINAKA Hiroyuki
System LSI Laboratory, Mitsubishi Electric Corporation
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SUMI Tadashi
System LSI Laboratory, Mitsubishi Electric Corporation
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TAKATA Hidehiro
Renesas Technology
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NUNOMURA Yasuhiro
Renesas Technology
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ITOH Niichi
Renesas Technology
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ARAKAWA Takahiko
Renesas Technology
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Ohbayashi Shigeki
Renesas Technology Corporation
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Tsukamoto Yasumasa
Renesas Technology Corporation
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SATO Hisakazu
Renesas Technology Corporation
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ITO Hironobu
Renesas Technology Corporation
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NAKANISHI Jingo
Renesas Technology Corporation
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Tomisawa Osamu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Takata H
Renesas Technology
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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NAKASE Yasunobu
Renesas Electronics Corp.
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Notani Hiromi
Renesas Technol. Corp.
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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Yoshida K
Renesas Technol. Corp. Itami‐shi Jpn
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Matsuda Y
Mitsubishi Electric Corp. Itami‐shi Jpn
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Matsuda Yoshio
System Lsi Laboratory Mitsubishi Electric Corporation
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KAWAI Hiroyuki
System LSI Development Center, Mitsubishi Electric Corporation
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NUNOMURA Yasuhiro
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SATO Hisakazu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITOH Niichi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KAGEMOTO Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ITO Hironobu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KURAFUJI Takashi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIOKA Nobuharu
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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NAKANISHI Jingo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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AKIYAMA Rei
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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IWABU Atsushi
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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YAMANAKA Tadao
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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SHIBAGAKI Takeshi
The author is with System LSI Division, Mitsubish Electric Corporation
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ARAKAWA Takahiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KOYAMA Masayuki
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MANO Ryuji
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MATSUDA Yoshio
The author is with High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Yoshida Kanako
Renesas Technology Corporation
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MAKINO Hiroshi
the System LSI Laboratory, Mitsubishi Electric Corporation
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SUZUKI Hiroaki
the System LSI Laboratory, Mitsubishi Electric Corporation
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MORINAKA Hiroyuki
the System LSI Laboratory, Mitsubishi Electric Corporation
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MASHIKO Koichiro
the System LSI Laboratory, Mitsubishi Electric Corporation
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SHINOHARA Hirofumi
Headquarters, Mitsubishi Electric Corporation
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SHIMIZU Toru
Renesas Technology Corp.
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Arakawa Masashi
Renesas Technology Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Yamanaka Toshio
The Graduate School Of Advanced Sciences Of Matter Hiroshima University:texas Instruments Japan Limi
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KURAFUJI Takashi
Renesas Technology
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AKIYAMA Rei
Renesas Device Design
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IWABU Atsushi
Renesas Device Design
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KAGEMOTO Tetsuya
Renesas Technology
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YOSHIOKA Nobuharu
Renesas Technology
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Uchida Takahiro
Renesas Technology Corporation
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Ipposhi Takashi
Renesas Technology Corp.
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Ipposhi Takashi
Renesas Technology Corporation
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Shinohara Hirofumi
Headquarters Mitsubishi Electric Corporation
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KUNIKIYO Tatsuya
ULSI Research and Development Center, Mitsubishi Electric Corporation
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ISHIKAWA Kiyoshi
ULSI Research and Development Center, Mitsubishi Electric Corporation
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Tomita Kazuo
Renesas Technology Corporation
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Kawai Hiroyuki
System Lsi Development Center Mitsubishi Electric Co.
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Tanaka Tomohiro
Renesas Technology Corporation
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Imaoka Susumu
Renesas Design Corporation
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Yabuuchi Makoto
Renesas Technology Corporation
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Kono Kazushi
Renesas Technology Corporation
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Oda Yuji
Shikino High-Tech Corporation
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Usui Keiichi
Daioh Electric Co. Ltd.
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Yonezu Toshiaki
Renesas Technology Corporation
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Iwamoto Takeshi
Renesas Technology Corporation
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Ishibashi Koichiro
Renesas Technology Corporation
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YAMADA Akira
Renesas Technology Corporation
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HIRANO Yuichi
Renesas Technology Corporation
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TSUKAMOTO Yasumasa
System LSI Development Center,Mitsubishi Electric Corporation
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IWADE Shuhei
System LSI Development Center,Mitsubishi Electric Corporation
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KOTANI Norihiko
Hiroshima International University
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Koyama Masayuki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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FUJII Masako
Renesas Technology Corporation
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IGARASHI Motoshige
Renesas Technology Corporation
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KAWAMURA Takeshi
Renesas Technology Corporation
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YOKOTA Miho
Renesas Technology Corporation
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TSUDA Nobuhiro
Renesas Technology Corporation
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YOSHIZAWA Tomoaki
Renesas Technology Corporation
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TSUTSUI Toshikazu
Renesas Technology Corporation
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TAKESHITA Naohiko
Renesas Technology Corporation
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MURATA Naofumi
Renesas Technology Corporation
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FUJIWARA Takanari
Renesas Design Corporation
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ASAHINA Kyoko
Renesas Technology Corporation
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OKADA Masakazu
Renesas Technology Corporation
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TAKEUCHI Masahiko
Renesas Technology Corporation
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YAMAMOTO Shigehisa
Renesas Technology Corporation
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SUGIMOTO Hiromitsu
Renesas Technology Corporation
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Mano Ryuji
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Sumi Tadashi
The System Lsi Development Center Mitsubishi Electric Corporation
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Sato Hisakazu
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Yamanaka T
Renesas Device Design
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Shimada T
Renesas Technol. Itami‐shi Jpn
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Ishikawa Kiyoshi
Ulsi Development Center Mitsubishi Electric Corporation
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Takata Hidehiro
Renesas Technol. Corp. Itami‐shi Jpn
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Yoshizawa Tomoaki
Renesas Technol. Corp. Itami‐shi Jpn
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Kunikiyo Tatsuya
Ulsi Development Center Mitsubishi Electric Corporation
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Ishibashi Koichiro
Renesas Technology
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Kawai Hiroyuki
System Lsi Development Center Mitsubishi Electric Corporation
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Kawamura Takeshi
Kitami Inst. Of Technol. Kitami‐shi Jpn
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Kawamura Takeshi
The Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Matsuda Yoshio
The Author Is With High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporati
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Matsuda Yoshio
System Lsi Development Center Mitsubishi Electric Corporation
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Suzuki Hiroaki
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Suzuki Hiroaki
System Lsi Development Center Mitsubishi Electric Corporation
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Shimizu Toru
Renesas Technology Corporation
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Shimizu Toru
Renesas Electronics Corporation
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
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Shimizu Toru
Renesas Electronics Corp.
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Takata Hidehiro
Renesas Electronics Corporation
著作論文
- Novel VLIW Code Compaction Method for a 3D Geometry Processor
- A Wide Range 1.0-3.6 V 200 Mbps, Push-Pull Output Buffer Using Parasitic Bipolar Transistors(Low-Power System LSI, IP and Related Technologies)
- Signal Integrity Design and Analysis for a 400 MHz RISC Microcontroller
- A Low Standby Current DSP Core Using Improved ABC-MT-CMOS with Charge Pump Circuit
- 招待講演 A 65nm embedded SRAM with wafer level burn-in mode, leak-bit redundancy and E-trim fuse for known good die (集積回路)
- A Design of High-Speed 4-2 Compressor for Fast Multiplier (Special Issue on Ultra-High-Speed LSIs)
- A Floating-Point Divider Using Redundant Binary Circuits and an Asynchronous Clock Scheme
- A 286 MHz 64-b Floating Point Multiplier with Enhanced CG Operation
- A 2.6-ns 64-b Fast and Small CMOS Adder (Special Issue on Ultra-High-Speed LSIs)
- A Low-Power Microcontroller with Body-Tied SOI Technology(Low-Power System LSI, IP and Related Technologies)
- Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation(the IEEE International Conference on SISPAD '02)
- A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology