Horiba Yasutaka | Lsi Laboratory Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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Yamaguchi Y
Central Workshop Osaka University
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Miki Takahiro
System Lsi Division Mitsubishi Electric Corporation
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Miki T
Faculty Of Education Gunma University
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HARADA Ayako
Faculty of Pharmaceutical Sciences, Teikyo University
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Wada Tetsuro
System Lsi Development Center Mitsubishi Electric Corporation
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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Asano Ken-ichi
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Yoshimoto Masahiko
Mitsubishi Electric Corporation
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KUMAKI Satoshi
System LSI Development Center,Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
System LSI Development Center,Mitsubishi Electric Corporation
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SCOTZNIOVSKY Stefan
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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Harada Ayako
Reproductive Pediatric And Infectious Science Yamaguchi University School Of Medicine
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Harada Ayako
Faculty Of Pharmaceutical Sciences Teikyo University
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Harada Ayako
Information Technology R&d Center Mitsubishi Electric Corporation
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Harada Ayako
Department Of Molecular Biodynamics The Tokyo Metropolitan Institute Of Medical Science (rinshoken)
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Ueda K
System Lsi Laboratory Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Yoshimoto Masahiko
System Lsi Development Center Mitsubishi Electric Corporation
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Scotzniovsky Stefan
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Yoshida Takeshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Yoshida T
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ueda K
Ntt Atsugi‐shi Jpn
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Hanami Atsuo
System Lsi Development Center Mitsubishi Electric Corporation
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Murayama Shu
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Okada Keisuke
Information And Technology R&d Center Mitsubishi Electric Corporation:(present Address)renesas T
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Ueda Katsuhiko
Department Of Information Engineering Nara National College Of Technology
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Kumaki Satoshi
System Lsi Development Center Mitsubishi Electric Corporation
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Segawa Hiroshi
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Yoshimoto M
Department Of Computer Science And Systems Engineering Kobe University
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NAKAMURA Yasuyuki
Mitsubishi Electric Corporation
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Miki Takahiro
LSI Laboratory, Mitsubishi Electric Corporation
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Nakamura Yasuyuki
LSI Laboratory, Mitsubishi Electric Corporation
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Okada Keisuke
LSI Laboratory, Mitsubishi Electric Corporation
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Sato H
Ntt Microsystem Integration Laboratories
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Matsumura T
System Lsi Development Center Mitsubishi Electric Corporation
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Ohara Eiji
Information Technology R&d Center Mitsubishi Electric Corporation
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Sato Hiromi
Riken
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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NAKAYAMA Kouichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAOKA Hiromichi
Research Center for Materials Science at Extreme Conditions, Osaka University
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TAKAI Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University
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INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
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KINOMURA Atsushi
ONRI, AIST
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HORINO Yuji
ONRI, AIST
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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KOMURASAKI Hiroshi
System LSI Division, Mitsubishi Electric Corporation
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SATO Hisayasu
System LSI Development Center, Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
System LSI Development Center, Mitsubishi Electric Corporation
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SASAKI Nagisa
System LSI Division, Mitsubishi Electric Corporation
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MIKI Takahiro
System LSI Division, Mitsubishi Electric Corporation
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HORIBA Yasutaka
Semiconductor Group, Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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WADA Yoshiki
System LSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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Sato H
Riken
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Wada Yoshiki
System Lsi Development Center Mitsubishi Electric Corp.
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Wada Y
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Saito H
Information Technology R Amp D Center Mitsubishi Electric Corporation
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Makino Hiroshi
Renesas Technology Corporation
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SUZUKI Hiroaki
System LSI Development Center, Mitsubishi Electric Corporation
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MAKINO Hiroshi
System LSI Development Center, Mitsubishi Electric Corporation
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NAKASE Yasunobu
Renesas Technology
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YAMADA Akira
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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TAKATA Hidehiro
The authors are with Electric Devices Design Center, Mitsubishi Electric Engineering Corporation
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ISHIHARA Kazuya
System LSI Development Center,Mitsubishi Electric Corporation
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SEGAWA Hiroshi
System LSI Development Center, Mitsubishi Electric Corporation
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MATSUURA Yoshinori
System LSI Development Center, Mitsubishi Electric Corporation
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SCOTZNIOVSKY Stefan
System LSI Development Center, Mitsubishi Electric Corporation
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MURAYAMA Shu
Information Technology R&D Center, Mitsubishi Electric Corporation
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WADA Tetsuo
Information Technology R&D Center, Mitsubishi Electric Corporation
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HARADA Ayako
Information Technology R&D Center, Mitsubishi Electric Corporation
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ASANO Ken-ichi
Information Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIDA Toyohiko
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
Kita-Itami Works, Mitsubishi Electric Corporation
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MATSUMURA Tetsuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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KUMAKI Satoshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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SEGAWA Hiroshi
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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ISHIHARA Kazuya
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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HANAMI Atsuo
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MATSUURA Yoshinori
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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MURAYAMA Shu
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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WADA Tetsuro
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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OHIRA Hideo
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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SHIMADA Toshiaki
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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YOSHIDA Toyohiko
The authors are with System LSI Development Center, Mitsubishi Electric Corporation
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YOSHIMOTO Masahiko
The authors are with Information Technology R&D Center, Mitsubishi Electric Corporation
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TSUCHIHASHI Koji
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Takai M
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Nakase Yasunobu
The System Lsi Laboratory Mitsubishi Electric Corporation
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Nakase Yasunobu
System Lsi Development Center Mitsubishi Electric Corporation
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KINOMURA Atsushi
National Institute of Advanced Industrial Science and Technology
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Nakayama Kazuhiko
Mechanical Processing Technology Research Laboratories Kao Corporation
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Yamamoto Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Makino H
Mitsubishi Electric Corp. Itami‐shi Jpn
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SUMI Tadashi
the System LSI Laboratory, Mitsubishi Electric Corporation
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MORINAKA Hiroyuki
System LSI Laboratory, Mitsubishi Electric Corporation
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SHINOHARA Hirofumi
Headquarters, Mitsubishi Electric Corporation
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SUMI Tadashi
System LSI Laboratory, Mitsubishi Electric Corporation
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TAKATA Hidehiro
Renesas Technology
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Shinohara Hirofumi
Headquarters Mitsubishi Electric Corporation
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Suzuki H
Ntt Photonics Labs. Ntt Corporation
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Yamamoto K
Renesas Technology Corp.
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Ohira Hideo
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Sumi T
The Authors Are With Electronics Research Laboratory Matsushita Electronics Corporation
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Sumi T
Department Of Obstetrics And Gynecology Osaka City University Medical School
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Murayama Shu
Information Technology R & D Center Mitsubishi Electric Corporation
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Nakayama K
National Inst. Advanced Industrial Technol. And Sci. Ibaraki Jpn
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Komurasaki Hiroshi
System Lsi Division Mitsubishi Electric Corporation
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Sasaki Nagisa
System Lsi Division Mitsubishi Electric Corporation
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NISHIKAWA Yoshikazu
Osaka Institute of Technology
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Ishihara Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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Suzuki H
Hiroshima Univ. Higashi‐hiroshima‐shi Jpn
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Yamada A
Wireless Laboratories Ntt Docomo Inc.
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Nishikawa Yoshikazu
LSI Laboratory, Mitsubishi Electric Corporation
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Shibata H
System Lsi Development Center Mitsubishi Electric Corporation
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Ulsi Development Center Mitsubishi Electric Corporation
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Kinomura A
National Institute Of Advanced Industrial Science And Technology
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Shimada Toshiaki
The Authors Are With Information Technology R&d Center Mitsubishi Electric Corporation
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Yoshida Toyohiko
The Authors Are With System Lsi Development Center Mitsubishi Electric Corporation
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Watanabe T
Microsystem Integration Laboratories Ntt Corporation
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Tsuchihashi K
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Nishikawa Y
Osaka Institute Of Technology
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Takai Mikio
Faculty Of Engineering Science And Reseatch Center For Extreme Materials
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Suzuki Hiroaki
System Lsi Development Center Mitsubishi Electric Co.
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Takata Hidehiro
The Authors Are With Electric Devices Design Center Mitsubishi Electric Engineering Corporation
著作論文
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- A Single-Chip MPEG-2 422P@ML Video, Audio, and System Encoder with a 162MHz Media-processor Core and Dual Motion Estimation Cores
- An Embedded Software Scheme for a Real-Time Single-Chip MPEG-2 Encoder System with a VLIW Media Processor Core (Special Issue on Low-Power High-Performance VLSI Processors and Technologies)
- A Design of High-Speed 4-2 Compressor for Fast Multiplier (Special Issue on Ultra-High-Speed LSIs)
- A 10 bit 50 MS/s CMOS D/A Converter with 2.7 V Power Supply (Special Section on Low-Power and Low-Voltage Integrated Circuits)
- Transient Analysis of Switched Current Source