INUISHI Masahide | Advanced Device Development Dept., Renesas Technology Corp.

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著作論文

Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
Deep Submicron Field Isolation with Buried Insulator between Polysilicon Electrodes (BIPS) (Special Section on High Speed and High Density Multi Functional LSI Memories)
A 90nm-node SOI Technology for RF Applications
Proximity Gettering of Heavy Metals by High-Energy Ion Implantation
New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation (Special Issue on Sub-Half Micron Si Device and Process Technologies)

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