KOMATSU Futoshi | Renesas Semiconductor Engineering Corp.
スポンサーリンク
概要
関連著者
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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KOMATSU Futoshi
Renesas Semiconductor Engineering Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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MAEGAWA Shigeto
Advanced Device Development Dept., Renesas Technology Corp.
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OHJI Yuzuru
Advanced Device Development Dept., Renesas Technology Corp.
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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HIRANO Yoichi
National Institute of Advanced Industrial Science and Technology (AIST)
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Ohji Yuzuru
Advanced Device Development Dept. Renesas Technology Corp.
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Hirano Y
Advanced Device Development Dept. Renesas Technology Corp.
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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Ipposhi Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohji Yuzuru
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hirano Yuuichi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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TAKASHINO Hiroyuki
Advanced Device Development Dept., Renesas Technology Corp.
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INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
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TSUJIUCHI Mikio
Advanced Device Development Dept., Renesas Technology Corp.
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IKEDA Tatsuhiko
Advanced Device Development Dept., Renesas Technology Corp.
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Ikeda Tatsuhiko
Advanced Device Development Dept. Renesas Technology Corp.
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Tsujiuchi Mikio
Advanced Device Development Dept. Renesas Technology Corp.
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Inuishi Masahide
Advanced Device Development Dept. Renesas Technology Corp.
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Tsujiuchi Mikio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inuishi Masahide
Advanced Device Development Department, Renesas Technology Corporation, 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
著作論文
- Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
- Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology