Hirao T | Advanced Device Development Dept. Renesas Technology Corp.

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著作論文

Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications
Suppression of Self-Heating in Hybrid Trench Isolated SOI MOSFETs with Poly-Si plug and W plug
Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
Direct Measurement of Transient Drain Currents in Partially-depleted SOI NMOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs

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