UEDA Kimio | System LSI Development Center, Mitsubishi Electric Corporation
スポンサーリンク
概要
関連著者
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UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
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Ueda K
Ntt Atsugi‐shi Jpn
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Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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Ueda K
System Lsi Laboratory Mitsubishi Electric Corporation
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Ueda Katsuhiko
Department Of Information Engineering Nara National College Of Technology
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Yamaguchi Y
Tohoku Univ. Sendai
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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SATO Hisayasu
System LSI Development Center, Mitsubishi Electric Corporation
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SASAKI Nagisa
System LSI Division, Mitsubishi Electric Corporation
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Sato H
Riken
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Saito H
Information Technology R Amp D Center Mitsubishi Electric Corporation
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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Yamaguchi Y
Central Workshop Osaka University
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Sasaki Nagisa
System Lsi Division Mitsubishi Electric Corporation
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Shibata H
System Lsi Development Center Mitsubishi Electric Corporation
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Hirao T
Advanced Device Development Dept. Renesas Technology Corp.
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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WADA Yoshiki
System LSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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INOUE Yasuo
ULSI Development Center, Mitsubishi Electric Corporation
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HIRAO Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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Wada Yoshiki
System Lsi Development Center Mitsubishi Electric Corp.
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Wada Y
Advanced Technology R&d Center Mitsubishi Electric Corporation
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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SHIBATA Hiroshi
Institute for Drug Discovery Research, Yamanouchi Pharmaceutical Co., Ltd.
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Sato Hiromi
Riken
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NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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KOMURASAKI Hiroshi
System LSI Division, Mitsubishi Electric Corporation
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YAMAMOTO Kazuya
System LSI Development Center, Mitsubishi Electric Corporation
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MIKI Takahiro
System LSI Division, Mitsubishi Electric Corporation
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HORIBA Yasutaka
Semiconductor Group, Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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YASUOKA Akihiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Inoue Y
National Defense Acad. Yokosuka Jpn
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KUBO Kazuo
Information Technology R amp D Center, Mitsubishi Electric Corporation
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Yamamoto Kazuya
System Lsi Development Center Mitsubishi Electric Corporation
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Yasuoka Akihiko
Ulsi Laboratory Mitsubishi Electric Corporation
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Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
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Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
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Yamamoto K
Renesas Technology Corp.
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KUBO Shunji
ULSI Laboratory, Mitsubishi Electrio Corp.
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YOSHOMURA Tsutomu
System LSI Development Center, Mitsubishi Electric Corp.
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HIROTA Takanori
the System LSI Division, Mitsubishi Electric Corp.
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TAKASOH Jun
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corp.
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Masahiko Koichiro
System LSI Laboratory, Mitsubishi Electric Corporation
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Kubo Kazuo
Information Technology R&d Center Mitsubishi Electric Corp.
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Inoue Y
Ntt Access Network Service Systems Laboratories Ntt Corporation
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Takasoh J
Mitsubishi Electric Corp. Itami‐shi Jpn
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Komurasaki Hiroshi
System Lsi Division Mitsubishi Electric Corporation
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Miki Takahiro
System Lsi Division Mitsubishi Electric Corporation
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Miki T
Faculty Of Education Gunma University
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Kubo Shunji
Ulsi Laboratory Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Yoshimura T
Mitsubishi Electric Corp. Itami‐shi Jpn
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Nishimura Tadashi
Ulsi Development Center Mitsubishi Electric Corporation
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Shibata Hiroshi
Institute Of Technology Mitsubishi Electric Corporation
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Shibata Hiroshi
Institute For Drug Discovery Research Yamanouchi Pharmaceutical Co. Ltd.:department Of Animal Scienc
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SHIBATA Hiroshi
Institute for Biomedical Research, Suntory Limited
著作論文
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
- Ultra Low Power Operation of Partially-Depleted SOI/CMOS Integrated Circuits (Special Issue on Low-power LSIs and Technologies)
- 3.0 Gb/s, 272 mW, 8:1 Multiplexer and 4.1 Gb/s, 388 mW, 1:8 Demultiplexer
- A New Emitter-Follower Circuit for High-Speed and Low-Power ECL