Wada Yoshiki | System Lsi Development Center Mitsubishi Electric Corp.
スポンサーリンク
概要
関連著者
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Wada Yoshiki
System Lsi Development Center Mitsubishi Electric Corp.
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Wada Y
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Takami T
Mitsubishi Electric Corp. Hyogo Jpn
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Kuroda Ken'ichi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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TAKAMI Tetsuya
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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OZEKI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Ozeki T
Sophia Univ. Tokyo Jpn
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WADA Yukihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Ozeki T
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ozeki T
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Ueda K
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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Takami Tetsuya
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ueda K
System Lsi Laboratory Mitsubishi Electric Corporation
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Mashiko Koichiro
The Ulsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Mashiko Koichiro
System Lsi Laboratory Mitsubishi Electric Corporation
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Ueda K
Ntt Atsugi‐shi Jpn
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Ozeki Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Ueda Katsuhiko
Department Of Information Engineering Nara National College Of Technology
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Wada Yukihiko
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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UEDA Kimio
System LSI Development Center, Mitsubishi Electric Corporation
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MAEDA Shigenobu
ULSI Development Center, Mitsubishi Electric Corporation
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WADA Yoshiki
System LSI Development Center, Mitsubishi Electric Corporation
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MASHIKO Koichiro
System LSI Development Center, Mitsubishi Electric Corporation
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Maegawa Shigeto
Advanced Device Development Dept. Renesas Technology Corp.
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Maeda Shigenobu
Ulsi Development Center Mitsubishi Electric Corporation
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HIROTA Takanori
the System LSI Division, Mitsubishi Electric Corp.
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YAMAGUCHI Yasuo
Institute for Materials Research, Tohoku University
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Nunoshita M
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Nunoshita M
Mitsubishi Electric Corp. Hyogo Jpn
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Nunoshita Masahiro
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Nunoshita Masahiro
Semiconductor Research Laboratory Mitsubishi Electric Corporation
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TAKAMI Tetsuya
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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KATAOKA Masayuki
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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WADA Yukihiko
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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TERADA Kumi
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
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TANIMURA Junji
Materials and Electronic Devices Laboratory, Mitsubishi Electric Corporation
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KOJIMA Kazuyoshi
Semiconductor Research Laboratory, Mitsubishi Electric Corporation
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Kataoka M
Hokkaido Univ. Sapporo Jpn
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Yamaguchi Y
Tohoku Univ. Sendai
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Yamaguchi Y
Kumamoto Techno Res. Park Kumamoto Jpn
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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MAEGAWA Shigeto
ULSI Laboratory, Mitsubishi Electric Corporation
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NII Koji
System LSI Development Center, Mitsubishi Electric Corporation
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IPPOSHI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
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HORIBA Yasutaka
System LSI Development Center, Mitsubishi Electric Corporation
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Horino Y
Advanced Device Development Dept. Renesas Technology Corp.
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IWAMATSU Toshiaki
Advanced Device Development Dept., Renesas Technology Corp.
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IPPOSHI Takashi
Advanced Device Development Dept., Renesas Technology Corp.
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Nii Koji
Renesas Technology Corporation
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Nii K
Renesas Technol. Corp. Itami‐shi Jpn
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Terada Kumi
Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation
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Tanimura J
Mitsubishi Electric Corp. Hyogo Jpn
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Kojima Kenichi
Graduate School Of Integrated Science Yokohama City University
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Kojima Kenichi
Department Of Physics Yokohama City University
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HORIBA Yasutaka
The authors are with Kita-Itami Works, Mitsubishi Electric Corporation
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KUBO Kazuo
Information Technology R amp D Center, Mitsubishi Electric Corporation
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Yamaguchi Y
Central Workshop Osaka University
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Kojima K
Department Of Electronic Engineering Faculty Of Engineering Aichi Institute Of Technology
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Ueda Kimio
Lsi Laboratory Mitsubishi Electric Corporation
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Tanimura Junji
Materials And Electronic Devices Laboratory Mitsubishi Electric Corporation
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Maegawa Shigeto
Ulsi Development Center Mitsubishi Electric Corporation
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Horiba Yasutaka
Lsi Laboratory Mitsubishi Electric Corporation
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Horiba Yasutaka
The Authors Are With Kita-itami Works Mitsubishi Electric Corporation
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Horiba Yasutaka
System Lsi Laboratory Mitsubishi Electric Corporation
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Kataoka Masayuki
Semiconductor Research Laboratory Mitsubishi Electric Coporarion
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Hieda Morishige
Information Technology R&d Center Mitsubishi Electric Corporation
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YOSHOMURA Tsutomu
System LSI Development Center, Mitsubishi Electric Corp.
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TAKASOH Jun
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corp.
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WADA Yoshiki
LSI Laboratory, Mitsubishi Electric Corporation
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HIROTA Takanori
LSI Laboratory, Mitsubishi Electric Corporation
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MASHIKO Koichiro
LSI Laboratory, Mitsubishi Electric Corporation
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HAMANO Hisanori
LSI Laboratory, Mitsubishi Electric Corporation
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Kubo Kazuo
Information Technology R&d Center Mitsubishi Electric Corp.
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Takasoh J
Mitsubishi Electric Corp. Itami‐shi Jpn
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Nishi Kazuhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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TAKAMI Tetsuya
the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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WADA Yukihiko
the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HIEDA Morishige
the Information Technology R&D Center, Mitsubishi Electric Corporation
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TAMAI Yasuo
the Kamakura Works, Mitsubishi Electric Corporation
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OZEKI Tatsuo
the Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Tamai Yasuo
The Kamakura Works Mitsubishi Electric Corporation
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Ipposhi T
Advanced Device Development Dept. Renesas Technology Corp.
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Hamano H
Mitsubishi Electric Corp. Itami‐shi Jpn
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Yoshimura T
Mitsubishi Electric Corp. Itami‐shi Jpn
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Kuroda Ken′ichi
Advanced Teach. R & D Center, Mitsubishi Electric Corp.
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Tanimura Junji
Materials and Electronic Device Laboratory, Mitsubishi Electric Corporation
著作論文
- Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Ultra Low Power Operation of Partially-Depleted SOI/CMOS Integrated Circuits (Special Issue on Low-power LSIs and Technologies)
- SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Aiming for SIS Mixers Using Ba_<1-x>K_xBiO_3 Bicrystal Junctions (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
- Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O Trilayer Junctions Using a Polishing Technique
- YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors
- Improvement in Ba_K_xBiO_3 Grain Boundary Junctions by Ar^+ Beam Irradiation
- Significant Improvement in Ba_K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering