YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors

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DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77 K
Ba_K_xBiO_3 Grain Boundary Junctions on a MgO Bicrystal Substrate
Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
In-plane Orientation and Coincidence Site Lattice Relation of Bi_2Sr_2CaCu_2O_x Thin Films Formed on Highly Mismatched (001) YAG Substrates
45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
(01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
Microscopic Study on (11n)-Oriented BiSrCaCuO Films by Cross-Sectional Transmission Electron Microscopy
BiSrCaCuO Thin Film Grown on SrTiO_3 Substrate with Off-Oriented (110) Surface
Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation
Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal
Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen
Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films
(11n)-Oriented BiSrCaCuO Thin Film Formed on SrTiO_3(110) Substrate by RF Magnetron Sputtering
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
Ultra Low Power Operation of Partially-Depleted SOI/CMOS Integrated Circuits (Special Issue on Low-power LSIs and Technologies)
SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
Effect of Growth Temperature on Superconducting Phases of As-Grown BiSrCaCuO Thin Film Formed by RF Magnetron Sputtering
Transfer Function Matrix Measurement of AWG Multi/Demulti-Plexers (Joint Special Issue on Photonics in Switching : Systems and Devices)
Optical Path Cross-Connect System Using Matrix Wavelength Division Multiplex Scheme (Joint Special Issue on Photonics in Switching : Systems and Devices)
Transfer Function Matrix Measurement of AWG Multi/Demulti-Plexers (Joint Special Issue on Photonics in Switching : Systems and Devices)
Optical Path Cross-Connect System Ushing Matrix Wavelength Division Multiplex Scheme (Joint Special Issue on Photonics in Switching : Systems and Devices)
A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer(Special Issue on Microwave and Millimeter Wave Technology)
Bragg Grating Filter Synthesis Using Fourier Transform with Iteration(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
Aiming for SIS Mixers Using Ba_<1-x>K_xBiO_3 Bicrystal Junctions (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O Trilayer Junctions Using a Polishing Technique
YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors
Improvement in Ba_K_xBiO_3 Grain Boundary Junctions by Ar^+ Beam Irradiation
Significant Improvement in Ba_K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
Fabrication of Full High-$T_{\text{c}}$ Superconducting YBa2Cu3O7-x Trilayer Junctions Using a Polishing Technique
Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000$\bar{1}$) by SiH4-Added Ar Anneal

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