Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal

スポンサーリンク

概要

論文の詳細を見る
2004-01-15

著者

関連論文

DC Superconducting Quantum Interference Devices with BiSrCaCuO Bicrystal Grain Boundary Junctions at 77 K
Ba_K_xBiO_3 Grain Boundary Junctions on a MgO Bicrystal Substrate
Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal
Electrical Characterization of Au/p-ZnSe Structure
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer(Special Issue on Microwave and Millimeter Wave Technology)
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O Trilayer Junctions Using a Polishing Technique
YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors
Improvement in Ba_K_xBiO_3 Grain Boundary Junctions by Ar^+ Beam Irradiation
Significant Improvement in Ba_K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering
Fabrication of Full High-$T_{\text{c}}$ Superconducting YBa2Cu3O7-x Trilayer Junctions Using a Polishing Technique
Specular Surface Morphology of Aluminum-Implanted 4H-SiC(000$\bar{1}$) by SiH4-Added Ar Anneal

もっと見る

スポンサーリンク