Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O<7-X> Trilayer Junctions Using a Polishing Technique

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2003-08-15

著者

• TAKAMI Tetsuya

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Wada Yoshiki

  System Lsi Development Center Mitsubishi Electric Corp.

• Wada Y

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Takami T

  Mitsubishi Electric Corp. Hyogo Jpn

• OZEKI Tatsuo

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• WADA Yukihiko

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

関連論文

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• Ba_K_xBiO_3 Grain Boundary Junctions on a MgO Bicrystal Substrate
• Hysteretic Josephson Junction Behavior of Ba_K_xBiO_3 Grain Boundary Junctions Using SrTiO_3 Bicrystal Substrates
• A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• In-plane Orientation and Coincidence Site Lattice Relation of Bi_2Sr_2CaCu_2O_x Thin Films Formed on Highly Mismatched (001) YAG Substrates
• 45° Grain Boundary Junctions in (001)-Oriented BiSrCaCuO Films
• (01n)-Oriented BiSrCaCuO Thin Films Formed on CeO_2 Buffer Layers
• Microscopic Study of an Artificial Grain Boundary Josephson Junction in a BiSrCaCuO Thin Film Formed on a SrTiO_3 (110) Substrate Using a MgO Buffer Layer
• Artificial Grain Boundary Junctions in BiSrCaCuO Thin Films with (11n) and (001) Orientation
• Dependence of Crystal Orientation of BiSrCaCuO Thin Films on Off-Angles of Vicinal SrTiO_3 (110) Surfaces
• Crystal Orientation of BiSrCaCuO (11n) Thin Films Determined by X-ray Asymmetric Reflection
• BiSrCaCuO Thin Film Grown on SrTiO_3 Substrate with Off-Oriented (110) Surface
• Bi_2(Sr, Ca)_3Cu_2O_x and Bi_2(Sr, Ca)_4Cu_3O_x Thin Films with (11n) Orientation
• Specular Surface Morphology of Aluminum-Implanted 4H-SiC(0001) by SiH_4-Added Ar Anneal
• Reactive Ion Etching of BiSrCaCuO Superconducting Thin Films using Ethane and Oxygen
• Effect of Ethane Addition to Argon in Etching of BiSrCaCuO Superconducting Thin Films
• Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
• Ultra Low Power Operation of Partially-Depleted SOI/CMOS Integrated Circuits (Special Issue on Low-power LSIs and Technologies)
• SOI/CMOS Circuit Design for High-Speed Communication LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
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• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
• Aiming for SIS Mixers Using Ba_<1-x>K_xBiO_3 Bicrystal Junctions (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
• Fabrication Of Full Hign-T_c Superconducting YBa_2Cu_3O Trilayer Junctions Using a Polishing Technique
• YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions on Vicinal Substrates : Superconductors
• Improvement in Ba_K_xBiO_3 Grain Boundary Junctions by Ar^+ Beam Irradiation
• Significant Improvement in Ba_K_xBiO_3 Grain Boundary Junctions on MgO Bicrystal Substrates by Minimal BaBiO_3 Sputtering
• Fabrication of Full High-$T_{\text{c}}$ Superconducting YBa2Cu3O7-x Trilayer Junctions Using a Polishing Technique

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