Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• MAEGAWA Shigeto

  ULSI Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• MAEDA Shigenobu

  ULSI Development Center, Mitsubishi Electric Corporation

• EIMORI Takahisa

  ULSI Development Center, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• SAYAMA Hirokazu

  ULSI Laboratory, Mitsubishi Electric Corporation

• Abe Yuji

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• OZEKI Tatsuo

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• NAKAHATA Takumi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Maegawa Shigeto

  Ulsi Development Center Mitsubishi Electric Corporation

• SUGIHARA Kohei

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Matsumoto Takuji

  Ulsi Development Center Mitsubishi Electric Corporation

• Ota Kazunobu

  Ulsi Development Center Mitsubishi Electric Corporation

• Oda Hidekazu

  Ulsi Development Center Mitsubishi Electric Corporation

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