Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-30

著者

• YAMAGUCHI Yasuo

  Institute for Materials Research, Tohoku University

• Yamaguchi Y

  Tohoku Univ. Sendai

• Yamaguchi Y

  Kumamoto Techno Res. Park Kumamoto Jpn

• YAMAGUCHI Yasuo

  ULSI Laboratory, Mitsubishi Electric Corporation

• NISHIMURA Tadashi

  ULSI Laboratory, Mitsubishi Electric Corporation

• INOUE Yasuo

  ULSI Development Center, Mitsubishi Electric Corporation

• TSUBOUCHI Natsuro

  ULSI Laboratory, Mitsubishi Electric Corporation

• JOACHIM Hans-Oliver

  ULSI Laboratory, Mitsubishi Electric Corporation

• Inoue Y

  National Defense Acad. Yokosuka Jpn

• Joachim Hans-oliver

  Ulsi Laboratory Mitsubishi Electric Corporation

• Yamaguchi Y

  Central Workshop Osaka University

• Nishimura Tadashi

  The Ulsi Development Center Mitsubishi Electric Corporation

• Tsubouchi Natsuro

  Lsi Research And Development Laboratory Mitusbishi Electric Corporation

• Tsubouchi Natsuro

  Ulsi Development Center Mitsubishi Electric Corporation

• Inoue Y

  Ntt Access Network Service Systems Laboratories Ntt Corporation

• Tsubouchi N

  Ulsi Dev. Center Hyogo Jpn

• Inoue Yasuo

  Ulsi Development Center Mitsubishi Electric Corporation

• Nishimura Tadashi

  Ulsi Development Center Mitsubishi Electric Corporation

関連論文

• Magnetic Phase Transition in DyNi_2Si_2
• Long Periodic Magnetic Structure in CeB_2C_2
• Magnetic Properties of Tetragonal Ce_Lu_xB_2C_2 (0 ≤ x ≤ 0.31) Compounds(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Magnetic Properties of Tetragonal Ce_Lu_xB_2C_2 (0≦x≦0.31) Compounds
• Magnetic Order-Order Transition in Tetragonal ErB_2C_2
• Systematic Study on Crystal Structures in Tetragonal RB_2C_2 (R=Rare Earth) Compounds
• Antiferroquadrupolar Ordering in the Pseudo-Binary Tetragonal Compounds Ho_Dy_xB_2C_2 : Condensed Matter: Electronic Properties, etc.
• Structural Study of Molten Silver Halides by Neutron Diffraction
• Physical and Structural Properties of Ternary Uranium Compounds in the U-Ni-Sn and U-Ni-In Systems
• Stractural and Magnetic Phase Transitions in a New Heavy-Fermion Compound UPd_2In
• Magnetic-Field-Induced Martensitic Transformation in Ni_2MnGa-Based Alloys : Condensed Matter: Structure, etc.
• Magnetic Structure of C14-Laves Phase DyMn_2
• Long Periodic Magnetic Structure in CeB_2C_2
• 21-P-10 Phase Transition and Structural Change in Tricalcium Phosphate
• Anomalous Magnetic Ordering Phenomena in Tetragonal TbB_2C_2 Observed by Neutron Diffraction(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
• Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
• A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
• A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
• Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
• The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
• Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
• Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
• Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
• Comparison of Standard and Low-Dose Separation-by-Implanted-Oxygen Substrates for 0.15 μm SOI MOSFET Applications
• High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
• Comparison of Standard and Low-Dose SIMOX Substrates for 0.15μm SOI MOSFET Applications
• Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
• Two-Dimensional Analytical Modeling of the Source/Drain Engineering Influemce on Short-Channel Effects in SOI MOSFET's
• Analytical Modeling of Short-Channel Behavior of Accumulation-Mode Transistors on Silicon-on-Insulator Substrate
• Anomalous Antiferromagnetic Properties of the Tetragonal Compound, TbB_2C_2
• Neutron Powder Diffraction Study on B-C Network Atomic Arrangements in Tetragonal CeB_2C_2
• Characteristic Magnetic Structure due to Antiferroquadrupolar Ordering in Ho^B_2C_2 : Condensed Matter: Electronic Properties, etc.
• Antiferromagnetic Structure with the Uniaxial Anisotropy in the Tetragonal LaB_2C_2 Type Compound,NdB_2C_2 : Condensed Matter: Electronic Properties, etc.
• Antiferroquadrupolar Ordering in DyB_2C_2 Studied by ^Dy Mossbauer Spectroscopy : Condensed Matter: Electronic Properties, etc.
• Effects of Y Dilution on the Antiferroquadrupolar Ordering in the Tetragonal Compound DyB_2C_2 : Condensed Matter Electronic Properties, etc.
• 161^y Mossbauer Spectroscopic Study of the Ferroquadrupolar Ordering Compound DyB_6 : Condensed Matter: Electronic Properties, etc.
• Anomalous Magnetic Phase Diagrams of HoB_2C_2: Antiferroquadrupolar Ordering in the Magnetic Phase
• Neutron Powder Diffraction on Ce^B_2C_2 and Nd^B_2C_2:A New Model for the Tetragonal Crystal Structure
• Antiferroquadrupolar Ordering and Magnetic Properties of the Tetragonal DyB_2C_2 Compound
• The New Neutron Powder Diffractometer with a Multi-Detector System for High-Efficiency and High-Resolution Measurements
• Crystalline Electric Field and Magnetic Properties of the TmCu_2Si_2 Intermetallics
• Impact of μA-ON-Current Gate-All-Around TFT (GAT) for Static RAM of 16Mb and beyond
• Impact of μ A-ON-Current Gate All-Around TFT (GAT) for 16MSRAM and Beyond
• An Effective Data Transfer Method for IEEE 802.11 Wireless LANs(Wireless Communication Technologies)
• Saturation Phenomenon of Stress-Induced Gate Leakage Current
• Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak
• Magnetic-Field-Induced Martensitic Transformation of Off-Stoichiometric Single-Crystal Ni_2MnGa
• Neutron Diffraction Study of Martensitic Transformation of Off-Stoichiometric Single-Crystal Ni_2MnGa(Condensed matter: structure and mechanical and thermal properties)
• ^Dy and ^Gd Mossbauer Spectroscopy of the RTC_2 Intermetallics (R=Dy, Gd ; T=Ni, Co)
• Neutron Diffraction Study of C14-Laves Phase TbMn_2
• ^Dy Mossbauer Spectroscopy of the Intermetallic Compounds DyNi_2Si_2, DyNi_2Ge_2 and DyAg_2Si_2
• Magnetic Behavior of Helical Magnet Fe_Co_Si
• Magnetic Properties of Ternary DyMn_2X_2 Compounds (X=Si and Ge)(Magnetism)
• Itinerant Electron Ferromagnetism in Fe_Co_xSi Studied by Polarized Neutron Diffraction
• Control of Carrier Collection Efficiency in n^+p Diode with Retrograde Well and Epitaxial Layers
• Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
• Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
• Disk-Shaped Stacked Capacitor Cell for 256 Mb Dynamic Random-Access Memory
• Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
• Spatial Distribution of Chain Stems and Chain Folding Mode in Polyethylene Lamellae as Revealed by Coupled Information of DSC, FT-IR, SANS, and WANS
• Anomalous Magnetic,Transport and Thermal Properties in the Half-Metallic Magnet UNiSn
• Neutron Diffraction Study of Shape Memory Alloys (Proceedings of the 1st International Symposium on Advanced Science Research(ASR-2000), Advances in Neutron Scattering Research)
• Neutron Diffraction Measurements of Inner Local Strain of Fatigued Carbon Steel
• Magnetic Structure of Rhombohedral Cr_2Se_3
• Localized Electron Nature of the Antiferromagnetism of (CePd_3)_8Ge : Response to Hydrostatic Pressure and Neutron Diffraction
• Localized Electron Nature of the Antiferromagnetism of (CePd_3)_8Ge : Response to Hydrostatic Pressure and Neutron Diffraction
• Displacement Waves in La_2CuO_ and La_Sr_CuO_
• Performance of a Torque Magnetometer in High Magnetic Fields using a Hybrid Magnet
• Optimization of Nitridation and Reoxidation Conditions for EEPROM^* Tunneling Dielectric
• A High Density High Performance Cell for 4M Bit Full Feature Electrically Erasable/Programmable Read-Only Memory
• High performance 0.2μm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
• Neutron Diffraction Studies of the Compounds MnN and FeN : Condensed Matter: Electronic Properties, etc.
• Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
• Message-Based Efficient Remote Memory Access on a Highly Parallel Computer EM-X (Special Issue on Architectures, Algorithms and Networks for Massively parallel Computing)
• Successive Antiferromagnetic Transitions and Magnetic Susceptibility of YBa_2Cu_Co_xO_y
• Design of the Dataflow Single-Chip Processor EMC-R
• Neutron Diffraction and Isotropic Volume Expansion Caused by Deuterium Absorption into La(Fe_Si_)_(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
• Reliable Multicast Protocol with a Representative Acknowledgment Scheme for Wireless Systems(Special Issue on Mobile Multimedia Communications)
• High-Field Magnetization of Some Mn Alloys(Magnetism)
• Circuit-Level Electrothermal Simulation of Electrostatic Discharge in Integrated Circuits (Special lssue on SISPAD'99)
• 3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications (Special Issue on TCAD for Semiconductor Industries)
• Realistic Scaling Scenario for Sub-100 nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation(the IEEE International Conference on SISPAD '02)
• Crystallinity of Large YBa_2Cu_3O_y Single Crystals Grown by the Solute Rich Liquid-Crystal Pulling Method
• New P-MOSFET Hot-Carrier Degradation Model for Bi-Directional Operation
• Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
• Application of Proximity Effect Correction Usirng Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure
• Leakage Mechanism of Local Junctions Forming the Main or Tail Mode of Retention Characteristics for Dynamic Random Access Memories
• Leakage Mechanism of Local Junctions Forming Main or Tail Mode of DRAM Retention Characteristics
• Bipolar Transistor with a Buried Layer Formed by High-Energy Ion Implantation for Subhalf-Micron Bipolar-Complementary Metal Oxide Semiconductor LSIs
• Advanced Retrograde Well Technology for 90-nm-Node Embedded Static Random Access Memory Using High-Energy Parallel Beam
• The Effects on Metal Oxide Semiconductor Field Effect Transistor Properties of Nitrogen Implantation into p^+ Polysilicon Gate
• The Impact of Nitrogen Implantation into Highty Doped Polysilicon Gates for flighty Reliable and High-Performance Sob-Quarter-Micron Dual-Gate Complementary Metal Oxide Semiconductor
• Magnetic and Crystallographic Properties of Deuterides YFe_2D_x
• A 0.4 μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High-Density Memories
• Separation of Neutral Glycoasparagines According to Their Content of cis Diol Groups
• Silica-Based Planar Lightwave Circuits for WDM Applications(Special Issue on High-Capacity WDM/TDM Networks)
• Silica-Based Planar Lightwave Circuits for WDM Systems
• High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure

もっと見る 閉じる

スポンサーリンク