High-Speed SOI 1/8 Frequency Divider Using Field-Shield Body-Fixed Structure
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概要
- 論文の詳細を見る
A high-speed silicon-on-insulator (SOI) 1/8 frequency divider with body-fixed structure was demonstrated using field-shield (FS) isolation. The maximum operation frequency is 2.1 GHz at 3.3 V. The SOI divider operates about 1.6 times faster than a bulk divider with the same dimensions. The normalized power consumption of the SOI divider at the maximum operating frequency is about 60% of that of the bulk divider. I d-V d transistor characteristics were improved, eliminating the kink in the saturation region, and the linearity of inverter characteristics was also improved with the body-fixed structure. The body contact collects excess carriers in the channel region, thereby preventing the parasitic bipolar action. From these results, it is suggested that devices using a field-shield body-fixed SOI structure have the potential for use in GHz-level systems containing analog circuits, and they are expected to be applied to portable communication systems and portable computers used in the multimedia era.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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IWAMATSU Toshiaki
ULSI Laboratory, Mitsubishi Electric Corporation
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YAMAGUCHI Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation
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HIRAO Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
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Ueda Kimio
System Lsi Development Center Mitsubishi Electric Corp.
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Mashiko Koichiro
System Lsi Development Center Mitsubishi Electric Corporation
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Inoue Yasuo
Ulsi Development Center Mitsubishi Electric Corporation
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Inoue Yasuo
ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
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Mashiko Koichiro
System LSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
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Hirao Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
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